TIP122 반도체 회로 부품 판매점
Medium Power Complementary silicon transistors
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 First Silicon |
SEMICONDUCTOR
TECHNICAL DATA
TIP120,121,122 Darlington TRANSISTOR (NPN)
TIP125,126,127 Darlington TRANSISTOR (PNP)
FEATURES
Medium Power Complementary silicon transistors
TIP120,121,122
TIP125,126,127
TO-220
1.BASE
2.COLLECTOR
3.EMITTER
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
RθJA
RθJc
TJ
Tstg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance Junction to Ambient
Thermal Resistance Junction to Case
Junction Temperature
Storage Temperature
TIP120
TIP125
60
60
TIP121
TIP126
80
80
5
5
2
62.5
1.92
150
-55to+150
TIP122
TIP127
100
100
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
TIP120,TIP125
TIP121,TIP126
TIP122,TIP127
TIP120,TIP125
TIP121,TIP126
TIP122,TIP127
TIP120,TIP125
TIP121,TIP126
TIP122,TIP127
TIP120,TIP125
TIP121,TIP126
TIP122,TIP127
Symbol
V(BR)CBO
VCEO(SUS)
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
Collector-emitter saturation voltage
VCE(sat)
Base-emitter voltage
Output Capacitance
TIP125,TIP126,TIP127
TIP120,TIP121,TIP122
VBE
Cob
Test conditions
IC= 1mA,IE=0
IC= 30mA,IB=0
VCB= 60 V, IE=0
VCB= 80 V, IE=0
VCB= 100V, IE=0
VCE=30 V, IB=0
VCE=40 V, IB=0
VCE=50 V, IB=0
VEB=5 V, IC=0
VCE= 3V, IC=0.5A
VCE= 3V, IC=3 A
IC=3A,IB=12mA
IC=5 A,IB=20mA
VCE=3V, IC=3 A
VCB=10V, IE=0,f=0.1MHz
MIN
60
80
100
60
80
100
1000
1000
Units
V
V
V
A
W
℃/W
℃/W
℃
℃
MAX UNIT
V
V
0.2 mA
0.5 mA
2 mA
2
4
V
2.5 V
300
200
pF
2011. 10. 14
Revision No : 0
1/2
Typical Characteristics
TIP120,121,122
TIP125,126,127
10000
1000
VCE = 4V
100
0.1
1
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
10
1000
f=0.1MHz
100
Cob
Cib
10
0.1 1 10
VCB[V], COLLECTOR-BASE VOLTAGE
VEB[V], EMITTER-BASE VOLTAGE
100
Figure 3. Output and Input Capacitance
vs. Reverse Voltage
80
70
60
50
40
30
20
10
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Figure 5. Power Derating
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.1
IC = 250IB
VBE(sat)
VCE(sat)
1
IC[A], COLLECTOR CURRENT
10
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
1
0.1
0.01
1
TIP120
TIP121
TIP122
10 100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 4. Safe Operating Area
2011. 10. 14
Revision No : 0
2/2
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TIP122 transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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