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PDF 2SC5089 Data sheet ( Hoja de datos )
| Número de pieza | 2SC5089 | |
| Descripción | Silicon NPN Transistor | |
| Fabricantes | Inchange Semiconductor | |
| Logotipo |  |
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INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC5089
DESCRIPTION
·High Gain Bandwidth Product
fT = 10 GHz TYP.
·High Gain, Low Noise Figure
︱S21e︱2 = 13 dB TYP., NF = 1.1 dB TYP @ f = 1 GHz
APPLICATIONS
·Designed for VHF~UHF band low noise amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
20 V
VCEO Collector-Emitter Voltage
10 V
VEBO
Emitter-Base Voltage
1.5 V
IC Collector Current-Continuous
40 mA
IB Base Current-Continuous
PC
Collector Power Dissipation
@TC=25℃
TJ Junction Temperature
20 mA
0.15 W
125 ℃
Tstg Storage Temperature Range
-55~125
℃
isc website：www.iscsemi.cn
1
1 page  
INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC5089
VCE = 8 V, IC = 20 mA, ZO = 50Ω
Freque.
S11
MHz
MAG.
ANG.
200
0.275
-80.2
400
0.147
-116.5
600
0.097
-150.0
800
0.083
179.5
1000
0.084
151.3
1200
0.095
135.6
1400
0.108
124.2
1600
0.121
113.8
1800
0.128
108.4
2000
0.146
104.2
S21
MAG.
ANG.
17.464
114.7
9.693
97.8
6.680
88.8
5.088
82.3
4.141
76.7
3.497
72.2
3.058
67.7
2.699
63.2
2.432
59.2
2.241
55.5
S12
MAG.
ANG.
0.033
68.9
0.057
72.0
0.082
72.7
0.106
72.1
0.131
71.2
0.156
69.8
0.182
67.7
0,206
65.2
0.228
63.0
0,253
61.6
S22
MAG.
ANG.
0.506
-36.6
0.353
-32.4
0.313
-27.9
0.300
-25.9
0.295
-25.2
0.295
-25.7
0.297
-27.3
0.289
-30.1
0.283
-33.2
0.274
-36.5
isc website：www.iscsemi.cn
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 2SC5089.PDF ] | |
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