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PDF CMPT591E Data sheet ( Hoja de datos )
| Número de pieza | CMPT591E | |
| Descripción | SURFACE MOUNT PNP SILICON TRANSISTOR | |
| Fabricantes | Central Semiconductor Corp | |
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CMPT591E
SURFACE MOUNT
PNP SILICON TRANSISTOR
SOT-23 CASE
CentralTM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT591E
type is a PNP silicon transistor manufactured by
the epitaxial planar process, epoxy molded in a
surface mount package, designed for high
current, general purpose amplifier applications.
Marking Code is C59.
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Current (Peak)
Power Dissipation
Operating and Storage
VCBO
VCEO
VEBO
IC
IB
ICM
PD
Junction Temperature
Thermal Resistance
TJ,Tstg
ΘJA
80
60
5.0
1.0
200
2.0
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
ICBO
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(ON)
hFE
hFE
hFE
hFE
fT
Cob
TEST CONDITIONS
VCB=60V
VEB=4.0V
IC=100µA
IC=10mA
IE=100µA
IC=500mA, IB=50mA
IC=1.0A, IB=100mA
IC=1.0A, IB=100mA
VCE=5.0V, IC=1.0A
VCE=5.0V, IC=1.0mA
VCE=5.0V, IC=500mA
VCE=5.0V, IC=1.0A
VCE=5.0V, IC=2.0A
VCE=10V, IC=50mA, f=100MHz
VCB=10V, IE=0, f=1.0MHz
MIN
80
60
5.0
200
200
50
15
150
UNITS
V
V
V
A
mA
A
mW
°C
°C/W
MAX
100
100
0.20
0.40
1.1
1.0
600
UNITS
nA
nA
V
V
V
V
V
V
V
MHz
10 pF
R2 ( 30-August 2001)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet CMPT591E.PDF ] | |
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