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PDF MCR16N Data sheet ( Hoja de datos )
| Número de pieza | MCR16N | |
| Descripción | Reverse Blocking Thyristors | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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MCR16N .comPreferred Device
Silicon Coneterot4llUed RectifiersReverse Blocking Thyristors
ShDesigned primarily for half–wave ac control applications, such as
tamotor controls, heating controls, and power supplies; or wherever
ahalf–wave, silicon gate–controlled devices are needed.
.D• Blocking Voltage to 800 Volts
• On–State Current Rating of 16 Amperes RMS
ww• High Surge Current Capability — 160 Amperes
w • Rugged Economical TO–220AB Package
m• Glass Passivated Junctions for Reliability and Uniformity
• Minimum and Maximum Values of IGT, VGT, and IH Specified for
oEase of Design
.c• High Immunity to dv/dt — 100 V/µsec Minimum at 125°C
• Device Marking: Logo, Device Type, e.g., MCR16N, Date Code
http://onsemi.com
SCRs
16 AMPERES RMS
800 VOLT
G
AK
UMAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
t4Rating
Symbol Value
Peak Repetitive Off–State Voltage(1)
e(TJ = –40 to 125°C, Sine Wave, 50 to
60 Hz, Gate Open)
MCR16N
VDRM,
VRRM
800
Unit
Volts
eOn-State RMS Current
IT(RMS)
h(180° Conduction Angles; TC = 80°C)
16
A
Peak Non-repetitive Surge Current
S(1/2 Cycle, Sine Wave 60 Hz,
TJ = 125°C)
taCircuit Fusing Consideration
(t = 8.3 ms)
ITSM
I2t
160 A
106 A2sec
aForward Peak Gate Power
(Pulse Width ≤ 1.0 µs, TC = 80°C)
PGM
5.0 Watts
.DForward Average Gate Power
(t = 8.3 ms, TC = 80°C)
PG(AV) 0.5 Watts
Forward Peak Gate Current
w(Pulse Width ≤ 1.0 µs, TC = 80°C)
wOperating Junction Temperature Range
IGM
TJ
2.0
– 40 to
+125
A
°C
w omStorage Temperature Range
Tstg
– 40 to
°C
+150
.c(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
Uapply for zero or negative gate voltage; positive gate voltage shall not be
t4applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage
eeratings of the devices are exceeded.
4
1
2
3
TO–220AB
CASE 221A
STYLE 3
PIN ASSIGNMENT
1 Cathode
2 Anode
3 Gate
4 Anode
ORDERING INFORMATION
Device
Package
Shipping
MCR16N
TO220AB
50 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
www.DataSh© Semiconductor Components Industries, LLC, 1999
1
Publication Order Number:
February, 2000 – Rev. 2
MCR16/D
1 page  
MCR16N
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
–40 –25 –10 5 20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 8. Typical Gate Trigger Voltage versus
Junction Temperature
160
1 Cycle
150
140
130
120
110
TJ = 125°C f = 60 Hz
100
90
1 2 3 4 5 6 7 8 9 10
NUMBER OF CYCLES
Figure 9. Maximum Non–Repetitive
Surge Current
http://onsemi.com
5
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MCR16N.PDF ] | |
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