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PDF BTS112A Data sheet ( Hoja de datos )
| Número de pieza | BTS112A | |
| Descripción | TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BTS112A (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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TEMPFET®
Features
q N channel
q Enhancement mode
q Temperature sensor with thyristor characteristic
q The drain pin is electricalIy shorted to the tab
BTS 112A
1 23
Pin 1 2 3
GDS
Type
BTS 112A
VDS
60 V
ID
12 A
RDS(on)
0.15 Ω
Package
TO-220AB
Ordering Code
C67078-S5014-A3
Maximum Ratings
Parameter
Drain-source voltage
Drain-gate voltage, RGS = 20 kΩ
Gate-source voltage
Continuous drain current, TC = 33 °C
ISO drain current
TC = 85 °C, VGS = 10 V, VDS = 0.5 V
Pulsed drain current, TC = 25 °C
Short circuit current, Tj = – 55 ... + 150 °C
Short circuit dissipation, Tj = – 55 ... + 150 °C
Power dissipation
Operating and storage temperature range
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Thermal resistance
Chip-case
Chip-ambient
Symbol
VDS
VDGR
VGS
ID
ID-ISO
ID puls
ISC
PSCmax
Ptot
Tj, Tstg
–
–
Rth JC
Rth JA
Values
60
60
± 20
12
2.5
48
27
400
40
– 55 ... + 150
E
55/150/56
≤ 3.1
≤ 75
Unit
V
A
W
°C
–
K/W
Semiconductor Group
1
04.97
1 page  
Max. power dissipation Ptot = f (TC)
BTS 112A
Typ. drain-source on-state resistance
RDS(on) = f (ID)
Parameter: VGS
Typical output characteristics ID = f (VDS)
Parameter: tp = 80 µs
Safe operating area ID = f (VDS)
Parameter: D = 0.01, TC = 25 °C
Semiconductor Group
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet BTS112A.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BTS112 | TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic) | Siemens Semiconductor Group |
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