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Taiwan Semiconductor |
CREAT BY ART
Surface Mount Super Fast Rectifiers
ES1AL thru ES1JL
Taiwan Semiconductor
FEATURES
- Glass passivated junction chip
- Ideal for automated placement
- Low profile package
- Low power loss, high efficiency
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: Sub SMA
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity: Indicated by cathode band
Weight: 0.019 g (approximately)
Sub SMA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
PARAMETER
ES ES ES ES ES ES
SYMBOL
1AL 1BL 1CL 1DL 1FL 1GL
Marking code
EAL EBL ECL EDL EFL EGL
Maximum repetitive peak reverse voltage
VRRM
50 100 150 200 300 400
Maximum RMS voltage
Maximum DC blocking voltage
VRMS
VDC
35 70 105 140 210 280
50 100 150 200 300 400
Maximum average forward rectified current
IF(AV)
1
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
30
ES
1HL
EHL
500
350
500
ES
1JL
EJL
600
420
600
Maximum instantaneous forward voltage (Note 1)
@1A
VF 0.95
1.3 1.7
Maximum reverse current @ rated VR TJ=25 ℃
TJ=125 ℃
Typical junction capacitance (Note 2)
IR
Cj
Maximum reverse recovery time (Note 3)
Trr
Typical thermal resistance
RθJL
RθJA
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
TJ
TSTG
Note 2: Measured at 1 MHz and Applied VR=4.0 Volts.
Note 3: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
5
100
10
35
35
85
- 55 to +150
- 55 to +150
8
UNIT
V
V
V
A
A
V
μA
pF
ns
OC/W
OC
OC
Document Number: DS_D1405035
Version: I14
ES1AL thru ES1JL
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
AEC-Q101
PACKING CODE GREEN COMPOUND
QUALIFIED
ES1xL
(Note 1)
Prefix "H"
RU
RV
RT
MT
RQ
MQ
R3
RF
R2
M2
RH
CODE
Suffix "G"
MH
Note 1: "x" defines voltage from 50V (ES1AL) to 600V (ES1JL)
PACKAGE
Sub SMA
Sub SMA
Sub SMA
Sub SMA
Sub SMA
Sub SMA
Sub SMA
Sub SMA
Sub SMA
Sub SMA
Sub SMA
Sub SMA
PACKING
1,800 / 7" Plastic reel (8mm tape)
3,000 / 7" Plastic reel (8mm tape)
7,500 / 13" Paper reel (8mm tape)
7,500 / 13" Plastic reel (8mm tape)
10,000 / 13" Paper reel (8mm tape)
10,000 / 13" Plastic reel (8mm tape)
1,800 / 7" Plastic reel (12mm tape)
3,000 / 7" Plastic reel (12mm tape)
7,500 / 13" Paper reel (12mm tape)
7,500 / 13" Plastic reel (12mm tape)
10,000 / 13" Paper reel (12mm tape)
10,000 / 13" Plastic reel (12mm tape)
EXAMPLE
PREFERRED P/N PART NO.
ES1JL RU
ES1JL RUG
ES1JLHRU
ES1JL
ES1JL
ES1JL
AEC-Q101
QUALIFIED
H
PACKING CODE
RU
RU
RU
GREEN COMPOUND
CODE
G
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
DESCRIPTION
Green compound
AEC-Q101 qualified
FIG.1 FORWARD CURRENT DERATING CURVE
1.2
1
0.8
0.6
0.4 RESISTIVE OR
INDUCTIVE LOAD
0.2
0
80
90 100 110 120 130 140 150
LEAD TEMPERATURE (oC)
FIG. 3 MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT
30
25 8.3ms Single Half Sine Wave
20
15
10
5
0
1
10
NUMBER OF CYCLES AT 60 Hz
100
Document Number: DS_D1405035
FIG. 2 TYPICAL FORWARD CHARACTERISTICS
100
Pulse Width=300μs
1% Duty Cycle
ES1HL-ES1JL
10 ES1FL-ES1GL
ES1AL-ES1DL
1
0.1
0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
FORWARD VOLTAGE (V)
1000
100
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
TJ=125℃
10
TJ=75℃
1
0.1 TJ=25℃
0.01
0
20 40 60 80 100 120
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
140
Version: I14
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