SS26 반도체 회로 부품 판매점
Surface Mount Schottky Barrier Rectifier
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 Taiwan Semiconductor |
CREAT BY ART
Surface Mount Schottky Barrier Rectifier
FEATURES
- Low power loss, high efficiency
- Ideal for automated placement
- Guardring for overvoltage protection
- High surge current capability
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
SS22 thru SS215
Taiwan Semiconductor
MECHANICAL DATA
Case: DO-214AA (SMB)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity: Indicated by cathode band
Weight: 0.093 g (approximately)
DO-214AA (SMB)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
PARAMETER
SS SS SS SS SS SS
SYMBOL
22 23 24 25 26 29
Maximum repetitive peak reverse voltage
VRRM
20 30 40 50 60 90
Maximum RMS voltage
VRMS
14 21 28 35 42 63
Maximum DC blocking voltage
VDC 20 30 40 50 60 90
Maximum average forward rectified current
IF(AV)
2
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
50
SS
210
100
70
100
Maximum instantaneous forward voltage (Note 1)
IF= 2 A @ 25℃
IF= 2 A @ 100℃
Maximum reverse current @ rated VR
Voltage rate of change (Rated VR)
TJ=25 ℃
TJ=100℃
TJ=125 ℃
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
VF
IR
dV/dt
RθJL
RθJA
TJ
TSTG
0.5
0.4
0.4
10
-
- 55 to +125
0.70 0.85
0.65 0.70
0.1
5-
-5
10000
24
70
- 55 to +150
- 55 to +150
SS
215
150
105
150
0.95
0.80
UNIT
V
V
V
A
A
V
mA
V/μs
OC/W
OC
OC
Document Number: D1307005
Version: H13
SS22 thru SS215
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
AEC-Q101
PACKING CODE
SS2xx
(Note 1)
QUALIFIED
Prefix "H"
R5
R4
M4
Note 1: "xx" defines voltage from 20V (SS22) to 150V (SS215)
GREEN COMPOUND
CODE
Suffix "G"
PACKAGE
SMB
SMB
SMB
PACKING
850 / 7" Plastic reel
3,000 / 13" Paper reel
3,000 / 13" Plastic reel
EXAMPLE
PREFERRED P/N
SS26 R5
SS26 R5G
SS26HR5
PART NO.
SS26
SS26
SS26
AEC-Q101
QUALIFIED
H
PACKING CODE
R5
R5
R5
GREEN COMPOUND
CODE
G
DESCRIPTION
Green compound
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
2.5
2.0
1.5 SS22-SS24
SS25-SS215
1.0
0.5 RESISTIVE OR
INDUCTIVE LOAD
0.0
50 60 70 80 90 100 110 120 130 140 150 160
LEAD TEMPERATURE .(oC)
50
40
30
20
10
0
1
FIG. 2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
8.3ms Single Half Sine
Wave JEDEC Method
10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 3- TYPICAL FORWARD CHARACTERISTICS
100
SS25-SS26
10
SS22-SS24
1
SS29-SS210
SS215
0.1
0
PULSE WIDTH=300μs
1% DUTY CYCLE
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
FORWARD VOLTAGE. (V)
100
10
1
0.1
0.01
0.001
0
FIG. 4- TYPICALREVERSE CHARACTERISTICS
SS22-SS24
SS25-SS215
TJ=125℃
TJ=75℃
TJ=25℃
20 40 60 80 100 120
PERCENT OF RATED PEAK REVERSE VOLYAGE(%)
140
Document Number: D1307005
Version: H13
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제조업체: Taiwan Semiconductor
( taiwan )
SS26 rectifier
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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