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PDF MBRB1045 Data sheet ( Hoja de datos )
| Número de pieza | MBRB1045 | |
| Descripción | Schottky Power Rectifier | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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MBRB1045, MBRD1045
Preferred Device
SWITCHMODEt
Schottky Power Rectifier
Surface Mount Power Package
This series of Power Rectifiers employs the Schottky Barrier
principle in a large metal−to−silicon power diode. State−of−the−art
geometry features epitaxial construction with oxide passivation and
metal overlay contact. Ideally suited for use in low voltage, high
frequency switching power supplies, free wheeling diodes, and
polarity protection diodes.
Features
• Guardring for Stress Protection
• Low Forward Voltage
• 175°C Operating Junction Temperature
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Short Heat Sink Tab Manufactured − Not Sheared!
• Pb−Free Packages are Available
Mechanical Characteristics:
• Case: Epoxy, Molded, Epoxy Meets UL 94 V−0
• Weight: 1.7 grams for D2PAK (approximately)
0.4 grams for DPAK (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Device Meets MSL1 Requirements
• ESD Ratings: Machine Model, C (>400 V)
Human Body Model, 3B (>8000 V)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR) TC = 135°C
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz)
TC = 135°C
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions
halfwave, single phase, 60 Hz)
VRRM
VRWM
VR
IF(AV)
IFRM
45
10
20
IFSM
150 (MBRB)
70 (MBRD)
V
A
A
A
Operating Junction and Storage
Temperature Range (Note 1)
TJ, Tstg −65 to +175 °C
Voltage Rate of Change (Rated VR)
dv/dt
10000
V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dPD/dTJ < 1/RqJA.
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
10 AMPERES, 45 VOLTS
1
4
3
MARKING DIAGRAM
4 AY WW
1
3
D2PAK
CASE 418B
PLASTIC
MBRB1045G
AKA
A = Assembly Location
Y = Year
WW = Work Week
MBRB1045 = Device Code
G = Pb−Free Package
AKA
= Diode Polarity
4 MARKING DIAGRAM
12
3
DPAK
CASE 369C
YWW
B10
45G
Y
WW
B1045
G
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2010
July, 2010 − Rev. 7
1
Publication Order Number:
MBRB1045/D
1 page  
MBRB1045, MBRD1045
PACKAGE DIMENSIONS
D2PAK 3
CASE 418B−04
ISSUE K
C
E
−B−
V
W
4
123
S
−T−
SEATING
PLANE
G
K
D 3 PL
0.13 (0.005) M T B M
A
W
J
H
SOLDERING FOOTPRINT*
10.49
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
INCHES
DIM MIN MAX
A 0.340 0.380
B 0.380 0.405
C 0.160 0.190
D 0.020 0.035
E 0.045 0.055
F 0.310 0.350
G 0.100 BSC
H 0.080 0.110
J 0.018 0.025
K 0.090 0.110
L 0.052 0.072
M 0.280 0.320
N 0.197 REF
P 0.079 REF
R 0.039 REF
S 0.575 0.625
V 0.045 0.055
MILLIMETERS
MIN MAX
8.64 9.65
9.65 10.29
4.06 4.83
0.51 0.89
1.14 1.40
7.87 8.89
2.54 BSC
2.03 2.79
0.46 0.64
2.29 2.79
1.32 1.83
7.11 8.13
5.00 REF
2.00 REF
0.99 REF
14.60 15.88
1.14 1.40
16.155
8.38
2X
1.016
2X
3.504
5.080
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MBRB1045.PDF ] | |
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