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PDF PMEG2020EPA Data sheet ( Hoja de datos )
| Número de pieza | PMEG2020EPA | |
| Descripción | MEGA Schottky barrier rectifier | |
| Fabricantes | NXP Semiconductors | |
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PMEG2020EPA
2 A low VF MEGA Schottky barrier rectifier
Rev. 01 — 27 January 2010
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOT1061 leadless small
Surface-Mounted Device (SMD) plastic package.
1.2 Features
Average forward current: IF(AV) ≤ 2 A
Reverse voltage: VR ≤ 20 V
Low forward voltage
Exposed heat sink (cathode pad) for excellent thermal and electrical conductivity
Leadless small SMD plastic package with medium power capability
AEC-Q101 qualified
1.3 Applications
Low voltage rectification
High efficiency DC-to-DC conversion
Switch Mode Power Supply (SMPS)
Reverse polarity protection
Low power consumption applications
Battery chargers for mobile equipment
1.4 Quick reference data
Table 1. Quick reference data
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max
IF(AV)
average forward current
square wave;
δ = 0.5;
f = 20 kHz
VR reverse voltage
VF forward voltage
IR reverse current
Tamb ≤ 80 °C
Tsp ≤ 140 °C
IF = 2 A
VR = 20 V
[1] -
-
-
-
-
-2
-2
- 20
385 420
335 1900
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
Unit
A
A
V
mV
μA
1 page  
NXP Semiconductors
PMEG2020EPA
2 A low VF MEGA Schottky barrier rectifier
102
duty cycle =
Zth(j-a)
(K/W)
1
0.5
0.25
0.75
0.33
0.2
10 0.1
0.05
0
0.02
0.01
006aab921
1
10−3
10−2
10−1
1
10 102 103
tp (s)
Ceramic PCB, Al2O3, standard footprint
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7. Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
VF
forward voltage
IF = 0.5 A
IF = 2 A
IR
reverse current
VR = 10 V
VR = 20 V
Cd diode capacitance f = 1 MHz
VR = 1 V
VR = 10 V
trr reverse recovery time
Min Typ
- 280
- 385
- 135
- 335
- 175
- 65
[1] -
50
[1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.
Max
-
420
-
1900
-
-
-
Unit
mV
mV
μA
μA
pF
pF
ns
PMEG2020EPA_1
Product data sheet
Rev. 01 — 27 January 2010
© NXP B.V. 2010. All rights reserved.
5 of 14
5 Page 
NXP Semiconductors
12. Revision history
Table 9. Revision history
Document ID
Release date
PMEG2020EPA_1
20100127
Data sheet status
Product data sheet
PMEG2020EPA
2 A low VF MEGA Schottky barrier rectifier
Change notice
-
Supersedes
-
PMEG2020EPA_1
Product data sheet
Rev. 01 — 27 January 2010
© NXP B.V. 2010. All rights reserved.
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