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PDF MURF1010E Data sheet ( Hoja de datos )
| Número de pieza | MURF1010E | |
| Descripción | (MURF1005 - MURF1060) 10.0 Ampere Isolated Glass Passivated Ultra Fast Recovery Rectifier | |
| Fabricantes | Thinki Semiconductor | |
| Logotipo |  |
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MURF1005 thru MURF1060
®
MURF1005 thru MURF1060
Pb
Pb Free Plating Product
10.0 Ampere Isolated Glass Passivated Ultra Fast Recovery Rectifier
Features
¬ Fast switching for high efficiency
¬ Low forward voltage drop
¬ High current capability
¬ Low reverse leakage current
¬ High surge current capability
ITO-220AB
.406(10.3)
.381(9.7)
.134(3.4)
.118(3.0)
Unit : inch (mm)
.189(4.8)
.165(4.2)
.130(3.3)
.114(2.9)
Mechanical Data
¬ Case:ITO-220AB Isolated/Insulated
¬ Epoxy: UL 94V-0 rate flame retardant
¬ Terminals: Solderable per MIL-STD-202
method 208
¬ Polarity:As marked on diode body
¬ Mounting position: Any
¬ Weight: 2.24 grams
.071(1.8)
.055(1.4)
.055(1.4)
.039(1.0)
.035(0.9)
.011(0.3)
.1
(2.55)
.1
(2.55)
.114(2.9)
.098(2.5)
.032(.8)
MAX
Case
Case
Case
Case
Positive
Negative
Common Cathode Common Anode
Suffix "CT"
Suffix "N"
Doubler Reverse Doubler
Suffix "D"
Suffix "E"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
COMMON CATHODE POLARITY
COMMON ANODE POLARITY
DOUBLER POLARITY
REVERSE POLARITY
SUFFIX "CT"
SUFFIX "N"
SUFFIX "D"
SUFFIX "E"
Maximum Recurrent Peak Reverse Voltage
SYMBOL
VRRM
MURF1005CT MURF1010CT MURF1020CT MURF1030CT MURF1040CT MURF1060CT
UNITMURF1005N MURF1010N MURF1020N MURF1030N MURF1040N MURF1060N
MURF1005D MURF1010D MURF1020D MURF1030D MURF1040D MURF1060D
MURF1005E MURF1010E MURF1020E MURF1030E MURF1040E MURF1060E
50 100 200 300 400 600 V
Maximum RMS Voltage
VRMS
35
70 140 210 280 420 V
Maximum DC Blocking Voltage
VDC 50 100 200 300 400 600 V
Maximum Average Forward Rectified
Current TC=100oC
IF(AV)
10.0 A
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
IFSM
100 A
Maximum Instantaneous Forward Voltage
@ 5.0 A
Maximum DC Reverse Current @TJ=25oC
At Rated DC Blocking Voltage @TJ=125oC
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Junction and Storage
Temperature Range
VF
IR
Trr
CJ
R JC
TJ, TSTG
0.98 1.3
10.0
250
35
65
2.2
-55 to +150
1.7 V
uA
uA
nS
pF
oCW
oC
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
Page 1/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MURF1010E.PDF ] | |
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