SDBS15 반도체 회로 부품 판매점
(SDB12 - SDB110) Schottky Barrier Rectifiers
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 Taiwan Semiconductor Company |
SDBS12 THRU SDBS110
Features
1.0 AMP. Schottky Barrier Rectifiers
Voltage Range
20 to 100 Volts
Current
1.0 Ampere
DB
Metal to silicon rectifier, majority carrier conduction
Low forward voltage drop
Easy pick and place
High surge current capability
Plastic material used carriers Underwriters
Laboratory Classification 94V-O
Epitaxial construction
High temperature soldering:
260oC/ 10 seconds at terminals
Small size, single installation lead solderable per
MIL-STD-202 Method 208
Mechanical Data
DBS
.047(1.20)
.040(1.02)
.205(5.2)
.195(5.0)
Case: Molded plastic
Terminals: Solder plated
Polarity: Indicated by cathode band
.335(8.51)
.320(8.13) 450
.013(0.33)
.0088(0.22)
.404(10.3)
.386(9.80)
.255(6.5)
.245(6.2)
.130(3.30)
.120(3.05)
.060(1.53)
.040(1.02)
.013(0.33)
.003(0.076)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol SDB SDB SDB SDB SDB SDB SDB Units
12 13 14 15 16 19 110
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SDBS SDBS SDBS SDBS SDBS SDBS SDBS
12 13 14 15 16 19 110
Maximum Recurrent Peak Reverse Voltage VRRM 20 30 40 50 60 90 100 V
Maximum RMS Voltage
VRMS 14 21 28 35 42 63 70 V
Maximum DC Blocking Voltage
VDC 20 30 40 50 60 90 100 V
Maximum Average Forward Rectified Current
at TL(See Fig. 1)
I(AV)
1.0
A
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
IFSM
30
A
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
(Note 1) @ 1.0A
VF
0.5
0.75
0.80
V
Maximum DC Reverse Current @ TA =25℃
at Rated DC Blocking Voltage @ TA=100℃
IR
0.4
10
5.0
0.05
0.5
mA
mA
Typical Junction Capacitance (Note 3)
Cj
50 pF
Typical Thermal Resistance ( Note 2 )
RθJL
RθJA
28 ℃/W
88 ℃/W
Operating Temperature Range
TJ -65 to +125
-65 to +150
℃
Storage Temperature Range
TSTG
Notes: 1. Pulse Test with PW=300 usec, 1% Duty Cycle
-65 to +150
℃
2. Measured on P.C.Board with 0.5 x 0.5”(12 x 12mm) Copper Pad Areas.
3. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
- 50 -
RATINGS AND CHARACTERISTIC CURVES (SDBS12 THRU SDBS110)
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
1.0
RESISTIVE OR
INDUCTIVE LOAD
SDBS12- SDBS14
SDBS15-SDBS110
0.5
FIG.2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
50
AT RATED TL
40 8.3ms Single Half Sine Wave
JEDEC Method
30
20
PCB MOUNTED ON 0.2X0.2"
(5.0X5.0mm) COPPER PAD AREAS
0
50 60 70 80 90 100 110 120 130
LEAD TEMPERATURE. (oC)
140 150
160 170
FIG.3- TYPICAL FORWARD CHARACTERISTICS
50
Tj=250C
10.0
SDBS12-SDBS14
SDBS15-SDBS16
1
SDBS19-SDBS110
0.1
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PULSE WIDTH=300 S
1% DUTY CYCLE
0.01
0
.2 .4 .6 .8 1.0 1.2 1.4 1.6
FORWARD VOLTAGE. (V)
FIG.5- TYPICAL JUNCTION CAPACITANCE
400
Tj=250C
f=1.0MHz
Vsig=50mVp-p
100
10
0
1 10
NUMBER OF CYCLES AT 60Hz
FIG.4- TYPICAL REVERSE CHARACTERISTICS
1000
100 SDBS12-SDBS14
Tj=1000C
10
SDBS15-SDBS16
1
SDBS19-SDBS110
0.1
Tj=250C
SDBS12-SDBS14
SDBS15-SDBS110
0.01 0 20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
100
10
.1
1.0 10
REVERSE VOLTAGE. (V)
100
- 51 -
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PDF 파일 내의 페이지 : 총 2 페이지
제조업체: Taiwan Semiconductor Company
( taiwan )
SDBS15 rectifier
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[ SDBS15.PDF ]
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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