GBU4K 반도체 회로 부품 판매점
(GBU4x) SILICON BRIDGE RECTIFIERS
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 Galaxy Semi-Conductor |
BL GALAXY ELECTRICAL
GBU4A --- GBU4M
SILICON BRIDGE RECT IFIERS
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 4.0 A
FEATURES
Ideal for printed circuit board
Reliable low cos t cons truction utilizing m olded
plas tic technique
Plas tic m aterrial has U/L flam m ability clas s ification
www.DataShe9et44UV.-cOom
Mounting pos ition: Any
Glass passivated chip junctions
GBU
.310(7.9)
.290(7.4)
.080(2.03)
.060(1.52)
.933(23.7)
.894(22.7)
.160(4.1)
.140(3.5)
+
+
.075(1.9)R.TYP.
_ ~ ~+
.185(4.7)
.165(4.2)
450
.085(2.16)
.065(1.65)
.740(18.8)
.720(18.3)
.100(2.54)
.085(2.16)
.190(4.83)
.210(5.33)
.050(1.27)
.040(1.02)
.710(18)
.690(17.5)
.140(3.56)
.130(3.30)
.085(2.18)
.075(1.90)
.022(.56)
.018(.46)
inch(mm)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
GBU GBU GBU GBU GBU
4A 4B 4D 4G 4J
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average f orw ard Tc=100 (note 1)
output current @TA=40 (note 2)
Peak f orw ard surge current
8.3ms single half -sine-w ave
superimposed on rated load
VRRM
V R MS
VDC
IF (AV)
IF SM
50
35
50
100 200 400 600
70 140 280 420
100 200 400 600
4.0
3.0
150.0
Maximum instantaneous f orw ard voltage
at 2.0 A
VF
1.0
Maximum reverse current
@TA=25
at rated DC blocking voltage @TA=125
IR
5.0
500.0
Typical junction capacitance per leg (note 3)
CJ
100
Typical thermal resistance per leg (note 2)
RθJA
22.0
(note 1)
RθJC
4.2
Operating junction temperature range
TJ
- 55 ---- + 150
Storage temperature range
TSTG
- 55 ---- + 150
N OTE: 1. Unit case m ounted on 1.6x1.6x0.06" thick (4.0x4.0x0.15cm ) AI. Plate.
2. U nits m ounted on P.C .B. with 0.5x0.5" (12x12m m) copper pads and 0.375" (9.5m m ) lead length.
3. Measured at 1.0 MH z and applied rev erse v oltage of 4.0 v olts.
GBU
4K
800
560
800
GBU
4M
1000
700
1000
UNITS
V
V
V
A
A
V
μA
mA
45 pF
/W
www.galaxycn.com
Document Number 0287025
BLGALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
GBU4A --- GBU4M
FIG.1 -- DERATING CURVE FOR OUTPUT RRECTIFIED CURRENT
4.0
3.0
2.0
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1.0
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
100
10
1.0
TJ=25
Pulse Width
=300uS
0.1
0 0 50 100 150
TEMPERATURE,
FIG.3 -- MAXIMUM NON-REPETITIVE PEAK FORWARD
DURGE CURRENT
150
TJ=TJ max.
SINGLE SINE-WAVE
120 (JEDEC METHOD)
90
60
30
1.0 CYCLE
1 10
100
NUMBER OF CYCLES AT 60Hz
FIG.5 -- TYPICAL JUNCTION CAPACITANCE PER LEG
.01
.4 .6 .8 1 1.2 1.4 1.6
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG.4 -- TYPICAL REVERSE CHARACTERISTIC
500
100 T J = 1 2 5
10
1.0
0.1
TJ=25
.01
0 20 40 60 80 100
PERCENT OF RATED PEAK REVERSE VOLTAGE
FIG.6 -- TYPICAL TRANSIENT THERMAL IMPEDANCE
1000
TJ=25
f=1.0 MHz
VSIG=50mVp-p
100
40
50-400V
600-1000V
10
.1 1
4 10
100
REVERSE VOLTAGE, VOLTS
100
10
1
.1.01
Document Number 0287025
BLGALAXY ELECTRICAL
.1 1 10 100
t, HEATING TIME, sec.
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2.
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제조업체: Galaxy Semi-Conductor
( gsc )
GBU4K rectifier
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[ GBU4K.PDF ]
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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