파트넘버.co.kr ES1BE 데이터시트 PDF


ES1BE 반도체 회로 부품 판매점

(ES1AE - ES1ME) Super Fast Recovery Silicon Rectifier



MCC 로고
MCC
ES1BE 데이터시트, 핀배열, 회로
www.DataSheet4U.com
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

  !"#
$ %    !"#
ES1AE
THRU
ES1ME
Features
x Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
x High Temp Soldering: 260qC for 10 Seconds At Terminals
x Superfast Recovery Times For High Efficiency
Maximum Ratings
x Operating Temperature: -50qC to +150qC
x Storage Temperature: -50qC to +150qC
x Maximum Thermal Resistance; 15qC/W Junction To Lead
MCC
Part
Number
ES1AE
ES1BE
ES1CE
ES1DE
ES1GE
ES1JE
ES1KE
ES1ME
Device
Marking
ES1A
ES1B
ES1C
ES1D
ES1G
ES1J
ES1K
ES1M
Maximum
Recurrent
Peak Reverse
Voltage
50V
100V
150V
200V
400V
600V
800V
1000V
Maximum
RMS
Voltage
35V
70V
105V
140V
280V
420V
560V
700V
Maximum
DC
Blocking
Voltage
50V
100V
150V
200V
400V
600V
800V
1000V
Electrical Characteristics @ 25qC Unless Otherwise Specified
Average Forward
Current
IF(AV)
1.0A TJ = 75qC
Peak Forward Surge
Current
IFSM
30A 8.3ms, half sine
Maximum
Instantaneous
Forward Voltage
ES1AE-DE
ES1GE-JE
ES1KE~ME
VF
.975V
1.35V
1.70V
IFM = 1.0A;
TJ = 25qC*
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
IR 5PA TJ = 25qC
100PA TJ = 100qC
Maximum Reverse
Recovery Time
ES1AE-DE
ES1GE-KE
ES1ME
Trr
50ns
75ns
100ns
IF=0.5A, IR=1.0A,
Irr=0.25A
Typical Junction
Capacitance
CJ 45pF Measured at
1.0MHz, VR=4.0V
*Pulse test: Pulse width 200 Psec, Duty cycle 2%
1 Amp Super Fast
Recovery
Silicon Rectifier
50 to 1000 Volts
DO-214AC
(SMAE)
H
Cathode Band
J
AC
E DB
G
DIMENSIONS
INCHES
DIM MIN
MAX
A .079
.096
B .050 .075
C .002 .008
D ---
.02
E .030 .060
G .189
.208
H .157
.180
J .090 .115
MM
MIN
2.01
1.27
.05
---
.76
4.80
4.00
2.29
MAX
2.44
1.90
.20
.51
1.52
5.30
4.57
2.92
SUGGESTED SOLDER
PAD LAYOUT
0.090”
NOTE
0.085”
0.070”
Revision: 5
www.mccsemi.com
1 of 4
2007/06/19


ES1BE 데이터시트, 핀배열, 회로
ES1AE thru ES1ME
Figure 1
Typical Forward Characteristics
50
ES1AE~DE
10
3.0
1.0
ES1GE~JE
ES1KE~ME
0.1
.01
.6
.8 1.0 1.2 1.4 1.6 1.8 2.0
FORWARD VOLTAGE,(V)
Instantaneous Forward Current - Amperesversus
Instantaneous Forward Voltage - Volts
MCC
TM
Micro Commercial Components
Figure 2
Forward Derating Curve
2.4
2.2
2.0
1.8
1.6
1.4
1.2
Amps
1.0
.8
.6
.4
Single Phase, Half Wave
.2 60Hz Resistive or Inductive Load
0
0
25 50 75 100 125 150
°C
Average Forward Rectified Current - Amperesversus
Ambient Temperature -°C
Figure 3
Junction Capacitance
100
60
40
20
pF
10
6
4
2
1
.1
.2
.4
TJ=25°C
12
Volts
4
10 20 40
Junction Capacitance - pFversus
Reverse Voltage - Volts
100 200 400
1000
Revision: 5
www.mccsemi.com
2 of 4
2007/06/19




PDF 파일 내의 페이지 : 총 4 페이지

제조업체: MCC

( mcc )

ES1BE rectifier

데이터시트 다운로드
:

[ ES1BE.PDF ]

[ ES1BE 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


ES1B

SMA ultra fast low-loss controlled avalanche rectifiers - NXP Semiconductors



ES1B

1 AMP SURFACE MOUNT GLASS SUPER FAST RECOVERY RECTIFIER - Fuji Electric



ES1B

1.0A SURFACE MOUNT SUPER-FAST RECTIFIER - Diodes Incorporated



ES1B

SURFACE MOUNT ULTRAFAST EFFICIENT PLASTIC RECTIFIER - General Semiconductor



ES1B

1 Amp Super Fast Recovery Silicon Rectifier 50 to 1000 Volts - Micro Commercial Components



ES1B

SURFACE MOUNT SUPERFAST RECTIFIER - Pan Jit International Inc.



ES1B

1.0AMP. SUPER FAST RECOVRY SILICON RECTIFIERS - Jinan Gude Electronic Device



ES1B

TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SUPER FAST RECTIFIER - Dc Components



ES1B

SURFACE MOUNT SUPER FAST SWITCHING RECTIFIER - Shanghai Sunrise Electronics