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RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SINGLE-PHASE SILICON BRIDGE RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 8.0 Amperes
RS801M
THRU
RS807M
FEATURES
* Low leakage
* Low forward voltage
* Mounting position: Any
* Surge overload rating: 200 amperes peak
* Ideal for printed circuit boards
* High forward surge current capability
MECHANICAL DATA
* UL listed the recognized component directory, file #E94233
* Epoxy: Device has UL flammability classification 94V-O
1.193 (30.3)
1.169 (29.7)
RS-8M
.150 (3.8)
.134 (3.4)
.189 (4.8)
.173 (4.4)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
.106 (2.7)
.096 (2.3)
.094 (2.4)
.078 (2.0)
.114 (2.9)
.098 (2.5)
.043 (1.1)
.035 (0.9)
.031 (0.8)
.023 (0.6)
.402 (10.2) .303 (7.7) .303 (7.7)
.386 (9.8) .287 (7.3) .287 (7.3)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At TA = 25oC unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Output Current at Tc = 75oC
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load
Operating and Storage Temperature Range
SYMBOL
VRRM
VRMS
VDC
IO
RS801M RS802M RS803M RS804M RS805M RS806M RS807M UNITS
50 100 200 400 600 800 1000 Volts
35 70 140 280 420 560 700 Volts
50 100 200 400 600 800 1000 Volts
8.0 Amps
IFSM
200 Amps
TJ,TSTG
-55 to + 150
0C
ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted)
CHARACTERISTICS
Maximum Forward Voltage Drop per element at 8.0A DC
Maximum Reverse Current at Rated
DC Blocking Voltage per element
@TA = 25oC
@TC = 100oC
SYMBOL
VF
IR
RS801M RS802M RS803M RS804M RS805M RS806M RS807M UNITS
1.1 Volts
10 uAmps
0.2 mAmps
2001-5
RATING AND CHARACTERISTIC CURVES (RS801M THRU RS807M)
TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
20
10
5
TC = 150 (TYP)
2
1
TC = 25 (TYP)
0.5
0.2 pulse test
per one diode
0.1
0.4 0.6
0.8
1
1.2
INSTANTANEOUS FORWARD VOLTAGE, (V)
SURGE FORWARD CURRENT CAPABILITY
260
sine wave
0
200
8.3ms 8.3ms
1 cycle
non-repetitive
Tj=25
100
POWER DISSIPATION
28
sine wave
Tj=150
24
20
16
12
8
4
0
0 2 4 6 8 10 12 14
AVERAGE RECTIFIED FORWARD CURRENT, Io (A)
TYPICAL FORWARD CURRENT
DERATING CURVE
3
on glass-epoxi substrate
2
P.C.B
soldering land 5mmf
sine wave
R-load
free in air
1
0
12
5 10 20
50 100
NUMBER OF CYCLE
00 40 80 120 160
AMBIENT TEMPERATURE, ( )
TYPICAL FORWARD CURRENT
DERATING CURVE
9
8
heatsink
Tc
Tc
7
6
sine wave
5 R-load
on heatsink
4
3
2
1
00 25 50 75 100 125 150 175
CASE TEMPERATURE, ( )
RECTRON
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