MBR6045 반도체 회로 부품 판매점
60A SCHOTTKY BARRIER RECTIFIER
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 Diodes Incorporated |
MBR6030PT - MBR6045PT
60A SCHOTTKY BARRIER RECTIFIER
Features
· Schottky Barrier Chip
· Guard Ring Die Construction for
Transient Protection
· Low Power Loss, High Efficiency
· High Surge Capability
· High Current Capability and Low Forward
Voltage Drop
· For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Application
· Plastic Material: UL Flammability
Classification Rating 94V-0
Mechanical Data
· Case: Molded Plastic
· Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
· Polarity: As Marked on Body
· Weight: 5.6 grams (approx.)
· Mounting Position: Any
· Marking: Type Number
H
S
R
P*
*2 Places
N
J
K
QL
G
A
B
C
D
MM
E
TO-3P
Dim Min
Max
A 3.20 3.50
B 4.59 5.16
C 20.80 21.30
D 19.70 20.20
E 2.10 2.40
G 0.51 0.76
H 15.90 16.40
J 1.70 2.70
K 3.10Æ 3.30Æ
L 3.50 4.51
M 5.20 5.70
N 1.12 1.22
P 1.93 2.18
Q 2.97 3.22
R 11.70 12.80
S 4.30 Typical
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@ TC = 125°C
(Note 1)
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage Drop
@ IF = 30A, TC = 25°C
@ IF = 30A, TC = 125°C
@ IF = 60A, TC = 25°C
Peak Reverse Current
at Rated DC Blocking Voltage
@ TC = 25°C
@ TC = 100°C
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Case (Note 1)
Operating and Storage Temperature Range
VRRM
VRWM
VR
VR(RMS)
IO
IFSM
VFM
IRM
Cj
RqJc
Tj, TSTG
MBR
6030PT
30
21
MBR
6035PT
MBR
6040PT
35 40
25 28
60
500
0.62
0.55
0.75
1.0
50
650
1.0
-55 to +150
MBR
6045PT
45
32
Unit
V
V
A
A
V
mA
pF
K/W
°C
Notes: 1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
DS30053 Rev. B-2
1 of 2
MBR6030PT - MBR6045PT
80
70
60
50
40
30
20
10
0
0
600
500
50 100
TC, CASE TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
150
8.3ms single half-sine-wave
JEDEC method
400
300
200
100
0
1 10 100
NUMBER OF CYCLES AT 60Hz
Fig. 3 Max Non-Repetitive Surge Current
100
100
10
1.0
0.1
0
Tj = 25°C
Pulse width = 300µs
2% duty cycle
0.2 0.4 0.6 0.8 1.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
10000
Tj = 25°C
1000
100
0.1 1.0 10 100
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance per Element
Tj = 100°C
10
1.0
Tj = 25°C
0.1
DS30053 Rev. B-2
0.01
0
10 20 30 40 50
PEAK REVERSE VOLTAGE (V)
Fig. 5 Typical Reverse Characteristics
60
2 of 2
MBR6030PT - MBR6045PT
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PDF 파일 내의 페이지 : 총 2 페이지
제조업체: Diodes Incorporated
( diodes )
MBR6045 rectifier
데이터시트 다운로드 :
[ MBR6045.PDF ]
[ MBR6045 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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