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NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D168
ES1 series
SMA ultra fast low-loss
controlled avalanche rectifiers
Product specification
2000 Feb 14
Philips Semiconductors
SMA ultra fast low-loss
controlled avalanche rectifiers
FEATURES
• Glass passivated
• High maximum operating temperature
• Ideal for surface mount automotive applications
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy absorption capability
• UL 94V-O classified plastic package
• Shipped in 12 mm embossed tape
• Marking: cathode, date code, type code
• Easy pick and place.
Product specification
ES1 series
DESCRIPTION
DO-214AC surface mountable package with glass
passivated chip.
The well-defined void-free case is of a transfer-moulded
thermo-setting plastic. The small rectangular package has
two J bent leads.
olumns
k
cathode
band
a
Top view
Side view
MSA474
Fig.1 Simplified outline (DO-214AC) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VRRM
repetitive peak reverse voltage
ES1A
ES1B
ES1C
ES1D
VR continuous reverse voltage
ES1A
ES1B
ES1C
ES1D
VRMS
root mean square voltage
ES1A
ES1B
ES1C
ES1D
IF(AV)
average forward current
IFSM non-repetitive peak forward current
Tstg storage temperature
Tj junction temperature
CONDITIONS
averaged over any 20 ms period;
Ttp = 120 °C; see Fig.2
t = 8.3 ms half sine wave;
Tj = 25 °C prior to surge;
VR = VRRMmax
See Fig.3
MIN. MAX. UNIT
− 50 V
− 100 V
− 150 V
− 200 V
− 50 V
− 100 V
− 150 V
− 200 V
− 35 V
− 70 V
− 105 V
− 140 V
−1A
− 25 A
−65 +175 °C
−65 +175 °C
2000 Feb 14
2
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