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Galaxy Microelectronics |
Production specification
Schottky Barrier Rectifiers
MBRF1030-MBRF10200
FEATURES
z High Surge Capacity.
Pb
z For Use in Low Voltage,High Frequency Lead-free
Inverters,Free Wheeling,and Polarity
Protecation Applications.
z Metal Silicon Junction,Majority Carrier Conduction..
z High Current Capacity,Lowforward Voltage Drop.
z Guard Ring for Over Voltage Protection.
ITO-220AC
MAXIMUM RATING operating temperature range applies unless otherwise specified
Sym
Parameter
bol
MBRF MBRF MBRF MBRF MBRF MBRF MBRF MBRF
1030 1035 1040 1045 1050 1060 1080 10100
Repetitive Peak
VRRM Reverse Voltage
30 35 40 45 50 60 80 100
MBRF
10150
150
MBRF Un
10200 it
200 V
VRMS RMS Voltage
21 25 28 32 35 42 56 70 105 140 V
VDC
IF(AV)
IFSM
RθJC
DC Blocking Voltage
Average Forward
Rectified Current
Peak Forward Surge
Current 8.3ms Single
Half-sine-wave
Superimposed on
Rsted Load
Maximum Thermal
Resistance(Note1)
30
35
40
Operating Junction
Tj Temperature Range
StorageTemperature
Tstg Range
Note:1.Thermal resistance from junction to case.
45
50 60
10
150
4.0
-55 to +150
-55 to +175
80 100 150 200 V
A
A
℃
/w
℃
℃
R016
Rev.A
www.gmicroelec.com
1
Production specification
Schottky Barrier Rectifiers
MBRF1030-MBRF10200
ELECTRICAL CHARACTERISTICS@ Ta=25℃ unless otherwise specified.
Parameter Symbol Test conditions
MBRF1030- MBRF1050- MBRF1080- MBRF
MBRF1045 MBRF1060 MBRF10100 10150
Reverse
Current
IR
VR=VRRM,TA=25℃
VR=VRRM,TA=125℃
0.1
15
Forward
Voltage
VF IF=10A ,TA=25℃
(Note1) IF=10A ,TA=125℃
0.70
0.57
Note:1.Pulse test:300µs width,1% duty cycle.
MAX
0.1 0.1
25 50
0.80 0.85 0.90
0.70 0.65 0.62
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified.
MBRF
10200
0.95
0.65
UNIT
mA
V
R016
Rev.A
www.gmicroelec.com
2
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