2N3029 반도체 회로 부품 판매점
SILICON CONTROLLED RECTIFIERS
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 Digitron Semiconductors |
2N3027-2N3032
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIER
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Characteristic
Symbol
2N3027
2N3030
2N3028
2N3031
2N3029
2N3032
Repetitive peak off-state voltage
Repetitive peak reverse voltage
VDRM 30V 60V 100V
VRRM 30V 60V 100V
DC on-state current
100°C case
75°C ambient
IT
500mA
250mA
Repetitive peak on-state current
Surge (non-repetitive) on-state current
50ms
8ms
ITRM
ITSM
30A
5A
8A
Peak gate current
Average gate current
IGM
IG(AV)
250mA
25mA
Reverse gate voltage
Reverse gate current
VGR
IGR
5V
3mA
Storage temperature range
Tstg
-65°C to +200°C
Operating temperature range
TJ
-65°C to +150°C
Blocking voltage ratings apply over the operating temperature range, provided the gate is connected to the cathode through an appropriate resistor, or adequate gate bias is used.
ELECTRICAL CHARACTERISTIC (@ 25°C unless otherwise noted) (2N3027-2N3029)
Parameter
Symbol
Min.
Typ.
Max.
25°C tests
Off state current
IDRM
-
0.002
0.100
Reverse current
IRRM
-
0.002
0.100
Reverse gate voltage
VGR 5 8 -
Gate trigger current
IGT -5 8 200
Gate trigger voltage
VGT
0.400
0.550
0.800
On-state voltage
VT
0.800
1.200
1.500
Holding current
IH
0.300
0.700
5.000
Off-state voltage – critical rate of rise
dv/dt
30
15
10
60
30
25
-
-
-
Gate trigger-on pulse width
tpg(on)
-
0.070
0.200
Delay time
td - 0.080 -
Rise time
tr - 0.040 -
Circuit commutated turn-off time
tg
-
0.700
2.000
Unit Test Condition
µA
µA
V
µA
V
V
mA
V/µs
µs
µs
µs
µs
RGK = 1KΩ, VDRM = rating
RGK = 1KΩ, VRRM = rating
IGR = 0.1mA
RGS = 10KΩ, VD = 5V
RGS = 100Ω, VD = 5V
IT = 1A (pulse test)
RGK = 1KΩ, VD = 5V
RGK = 1KΩ, VD = 30V (2N3027)
RGK = 1KΩ, VD = 60V (2N3028)
RGK = 1KΩ, VD = 100V (2N3029)
IG = 10mA, IT = 1A, VD = 30V
IG = 10mA, IT = 1A, VD = 30V
IG = 10mA, IT = 1A, VD = 30V
IT = 1A, IR = 1A, RGK = 1KΩ
Rev. 20150306
2N3027-2N3032
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIER
Parameter
150°C Tests
High temperature off-state current
High temperature reverse current
High temperature gate trigger voltage
High temperature holding current
-65°C Tests
Low temperature gate trigger voltage
Low temperature gate trigger current
Low temperature holding current
Symbol
IDRM
IRRM
VGT
IH
VGT
IGT
IH
Min. Typ.
-
-
0.100
0.050
2
20
0.150
0.200
0.600
0
0.500
0.750
150
3.500
Max.
20
50
0.600
1.000
1.100
1.200
10
ELECTRICAL CHARACTERISTIC (@ 25°C unless otherwise noted) (2N3030-2N3032)
25°C tests
Off state current
IDRM
-
0.002
0.100
Reverse current
IRRM
-
0.002
0.100
Reverse gate voltage
VGR 5 8 -
Gate trigger current
IGT -5
20
Gate trigger voltage
VGT 0.440
0.600
On-state voltage
VT
0.800
1.200
1.500
Holding current
IH
0.300
1.000
4.000
Off-state voltage – critical rate of rise
dv/dt
30
15
10
60
30
25
-
-
-
Gate trigger-on pulse width
tpg(on)
-
0.050
0.100
Delay time
td - 0.100 -
Rise time
tr - 0.050 -
Circuit commutated turn-off time
tg
-
0.700
2.000
150°C Tests
High temperature off-state current
IDRM -
2 20
High temperature reverse current
IRRM -
20 50
High temperature gate trigger voltage
VGT
0.100
0.150
0.400
High temperature holding current
IH
0.050
0.300
2.000
-65°C Tests
Low temperature gate trigger voltage
VGT
0.440
0.800
0.950
Low temperature gate trigger current
IGT
0
0.400
0.500
Low temperature holding current
IH
0.500
5.000
8
Unit Test Condition
µA RGK = 1KΩ , VDRM = rating
µA RGK = 1KΩ, V RRM = rating
V RGS = 100Ω, VD = 5V
mA RGK = 1KΩ, VD = 5V
V RGS = 100Ω, VD = 5V
mA RGS = 10KΩ, VD = 5V
mA RGK = 1KΩ, VD = 5V
µA
µA
V
µA
V
V
mA
V/µs
µs
µs
µs
µs
RGK = 1KΩ, VDRM = rating
RGK = 1KΩ, VRRM = rating
IGR = 0.1mA
RGS = 10KΩ, VD = 5V
RGS = 100Ω, VD = 5V
IT = 1A (pulse test)
RGK = 1KΩ, VD = 5V
RGK = 1KΩ, VD = 30V (2N3030)
RGK = 1KΩ, VD = 60V (2N3031)
RGK = 1KΩ, VD = 100V (2N3032)
IG = 10mA, IT = 1A, VD = 30V
IG = 10mA, IT = 1A, VD = 30V
IG = 10mA, IT = 1A, VD = 30V
IT = 1A, IR = 1A, RGK = 1K
µA RGK = 1KΩ, VDRM = rating
µA RGK = 1KΩ, VRRM = rating
V RGS = 100Ω, VD = 5V
mA RGK = 1K, VD = 5V
V RGS = 100Ω, VD = 5V
mA RGS = 10KΩ, VD = 5V
mA RGK = 1KΩ, VD = 5V
Rev. 20150306
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제조업체: Digitron Semiconductors
( digitrons )
2N3029 rectifier
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IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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