2N2324A 반도체 회로 부품 판매점
Silicon Controlled Rectifier
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 Aeroflex |
Silicon Controlled Rectifier
2N2323, 2N2324, 2N2326, 2N2328 & 2N2329
2N2323S, 2N2324S, 2N2326S, 2N2328S & 2N2329S
2N2323A, 2N2324A, 2N2326A & 2N2328A, 2N2329A
2N2323AS, 2N2324AS, 2N2326AS, 2N2328AS, 2N2329AS
Features
• Available in JAN, JANTX and JANTXV
per MIL-PRF-19500/276
• TO-5 & TO-39 (TO-205AD) Package
Maximum Ratings
Ratings
Symbol
2N2323, S/ 2N2324, S/ 2N2326, S/ 2N2328, S/ 2N2329, S/
2N2323A, S 2N2324A, S 2N2326A, S 2N2328A, S 2N2329A, S
Unit
Reverse Voltage
Working Peak Reverse Voltage
Forward Blocking Voltage
Average Forward Current (1)
Forward Current Surge Peak(2)
Cathode-Gate Current
Operating Temperature
Storage Junction Temperature
VRM
VRM
VFBXM
IO
IFSM
VKGM
Top
Tstg
50
75
50(3/4)
100
150
100(3/4)
200
300
200(3/4)
0.22
15
6
-65 to +125
-65 to +150
300
400
300(3/4)
400
500
400(3)
Vdc
Vpk
Vpk
Adc
Adc
Vpk
°C
°C
NOTES:
1. This average forward current is for an ambient temperature of 800C and 180 electrical degrees of conduction.
2. Surge current is non-recurrent. The rate of rise of peak surge current shall not exceed 40 A during the first 5 ms
after switching from the ‘off’ (blocking) to the ‘on’ (conducting) state. This is measured from the point where the
thyristor voltage has decayed to 90% of its initial blocking value.
3. Gate connected to cathode through 1,000 ohm resistor.
4. Gate connected to cathode through 2,000 ohm resistor.
Electrical Characteristics
Characteristics
SUBGROUP 2 TESTING
Reverse Blocking Current
R2 = 1 kΩ
R2 = 2 kΩ
VR = 50 Vdc
VR = 100 Vdc
VR = 200 Vdc
VR = 300 Vdc
VR = 400 Vdc
2N2323 thru 2N2329
2N2323S thru 2N2329S
2N2323A thru 2N2329A
2N2323AS thru 2N2329AS
2N2323, S, A, AS
2N2324, S, A, AS
2N2326, S, A, AS
2N2328, S, A, AS
2N2329, S, A, AS
Symbol
Mimimum Maximum
Units
IRBX1
---
10 μAdc
Revision Date: 2/19/2013
New Product
1
2N2323, 2N2324, 2N2326,
2N2328 & 2N2329
Electrical Characteristics -con’t
Characteristics
SUBGROUP 2 TESTING-con’t
Forward Blocking Current
R2 = 1 kΩ
R2 = 2 kΩ
VR = 50 Vdc
VR = 100 Vdc
VR = 200 Vdc
VR = 300 Vdc
VR = 400 Vdc
Reverse Gate Current
VKG = 6 Vdc
2N2323 thru 2N2329
2N2323S thru 2N2329S
2N2323A thru 2N2329A
2N2323AS thru 2N2329AS
2N2323, S, A, AS
2N2324, S, A, AS
2N2326, S, A, AS
2N2328, S, A, AS
2N2329, S, A, AS
Gate Trigger Voltage and Current
V2 = VFBX = 6 Vdc; RL = 100 W
Re = 1 kΩ
2N2323 thru 2N2329 and
2N2323S thru 2N2329S
Re = 2 kΩ
2N2323A thru 2N2329A and
2N2323AS thru 2N2329AS
SUBGROUP 4 TESTING
Exponential Rate of Voltage Rise TA = 125 °C
50 Ω ≤ RL ≤ 400 W, C = 0.1 to 1.0 μF, repetition rate = 60 pps,
test duration = 15 seconds
dv/dt = 1.8 v/μs, R3 = 1 kΩ 2N2323 thru 2N2329 and
2N2323S thru 2N2329S
dv/dt = 0.7 v/ms, R3 = 2 kW 2N2323A thru 2N2329A and
2N2323AS thru 2N2329AS
VR = 50 Vdc
2N2323, S, A, AS
VR = 100 Vdc
2N2324, S, A, AS
VR = 200 Vdc
2N2326, S, A, AS
VR = 300 Vdc
2N2328, S, A, AS
VR = 400 Vdc
2N2329, S, A, AS
Forward “on” Voltage
IFM = 4a (pk) (pulse), pulse width = 8.5 ms, max; duty cycle = 2% maximum
Holding Current
VAA = 24 Vdc maximum, IF1 = 100 mAdc, IF2 = 10 mAdc
Gate trigger source voltage = 6 Vdc,
trigger pulse width = 25 ms minimum, R2 = 330 Ω
R3 = 1 kΩ
2N2323 thru 2N2329 and
2N2323S thru 2N2329S
R3 = 2 kΩ
2N2323A thru 2N2329A and
2N2323AS thru 2N2329AS
Symbol
IFBX1
Ikg
VGT1
IGT1
VGT1
IGT1
IFBX
VFM
IHOX
Mimimum Maximum
- - - 10
---
0.35
0.35
200
0.80
200
0.60
20
47
95
190
285
380
---
---
2.2
- - - 2.0
Units
μAdc
μAdc
Vdc
μAdc
Vdc
μAdc
Vdc
V(pk)
mAdc
2 603-641-3800 • 888-641--SEMI (7364) • [email protected] • www.aeroflex.com/metelics
Revision Date: 2/19/2013
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2N2324A rectifier
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