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SEMICONDUCTOR
MBR1030CT thru 1060CT
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE - 30 to 60 Volts
FORWARD CURRENT - 10 Amperes
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification 94V-0
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
MECHANICAL DATA
Case : TO-220AB molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : Any
TO-220AB
B
C
K
PIN
123
I
HH
PIN 1
PIN 3
L
M
D
A
E
F
G
J
N
PIN 2
CASE
TO-220AB
DIM. MIN. MAX.
A 14.22 15.88
B 9.65 10.67
C 2.54 3.43
D 5.84 6.86
E 8.26 9.28
F - 6.35
G 12.70 14.73
H 2.29 2.79
I 0.51 1.14
J 0.30 0.64
K 3.53 4.09
L 3.56 4.83
M 1.14 1.40
N 2.03 2.92
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
SYMBOL
MBR
1030CT
Maximum Recurrent Peak Reverse Voltage
VRRM
30
Maximum RMS Voltage
VRMS
21
Maximum DC Blocking Voltage
VDC 30
Maximum Average Forward RectifiedCurrent
at TC=105 C (See Fig.1)
I(AV)
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load (JEDEC METHOD)
IFSM
Voltage Rate of Change (Rated VR)
dv/dt
Maximum Forward
Voltage, (Note 1)
@IF=5A TJ =125 C
@IF=5A TJ =25 C
@IF=10A TJ =125 C
VF
MBR
1035CT
35
24.5
35
MBR
1040CT
40
28
40
MBR
1045CT
45
31.5
45
10
0.57
0.70
0.84
125
10000
MBR
1050CT
50
35
50
MBR
1060CT
60
42
60
UNIT
V
V
V
A
0.65
0.80
0.90
A
V/us
V
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =25 C
@TJ =125 C
IR
0.1
15
mA
Typical Junction Capacitance,
per element (Note 2)
Typical Thermal Resistance (Note 3)
Operating Temperature Range
Storage Temperature Range
CJ
R0JC
TJ
TSTG
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Thermal Resistance Junction to Case.
3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
170
3.0
-55 to +150
-55 to +175
220 pF
C/W
C
C
REV. 0, 04-Mar-2002, KTHC12
RATING AND CHARACTERISTIC CURVES
MBR1030CT thru MBR1060CT
FIG.1 - FORWARD CURRENT DERATING CURVE
16
12
8
4
RESISTIVE OR
INDUCTIVE LOAD
0
25 50 75 100 125
CASE TEMPERATURE , C
150
175
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
100
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
150
125
100
75
50
25
0
1
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
2 5 10
20
50
NUMBER OF CYCLES AT 60Hz
100
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
100
10
TJ = 125 C
1.0
0.1
0.01 TJ = 25 C
0.001
0
20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%)
MBR1030CT ~ MBR1045CT
10
MBR1050CT ~ MBR1060CT
1.0
TJ = 25 C
PULSE WIDTH 300us
2% Duty cycle
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
1.0
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
MBR1030CT ~ MBR1045CT
100 MBR1050CT ~ MBR1060CT
TJ = 25 C, f= 1MHz
10
0.1
1 4 10
REVERSE VOLTAGE , VOLTS
100
REV. 0, 04-Mar-2002, KTHC12
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