1N5404G 반도체 회로 부품 판매점
GLASS PASSIVATED JUNCTION SILICON RECTIFIERS
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 EIC discrete Semiconductors |
1N5400G - 1N5408G
PRV : 50 - 1000 Volts
Io : 3.0 Amperes
GLASS PASSIVATED JUNCTION
SILICON RECTIFIERS
DO - 201AD
FEATURES :
* Glass passivated chip
* High current capability
* High reliability
* Low reverse current
* Low forward voltage drop
MECHANICAL DATA :
* Case : DO-201AD Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 1.21 grams
0.21 (5.33)
0.19 (4.83)
0.052 (1.32)
0.048 (1.22)
1.00 (25.4)
MIN.
0.375 (9.53)
0.285 (7.24)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length Ta = 75 °C
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at IF = 3.0 Amps.
Maximum DC Reverse Current Ta = 25 °C
at rated DC Blocking Voltage
Ta = 100 °C
Typical Junction Capacitance (Note1)
Typical Thermal Resistance (Note2)
Junction Temperature Range
Storage Temperature Range
SYMBOL 1N5400G 1N5401G 1N5402G 1N5404G 1N5406G 1N5407G 1N5408G UNIT
VRRM 50 100 200 400 600 800 1000 Volts
VRMS
35
70 140 280 420 560 700 Volts
VDC 50 100 200 400 600 800 1000 Volts
IF(AV)
3.0 Amps.
IFSM
VF
IR
IR(H)
CJ
RθJA
TJ
TSTG
150
1.0
5.0
50
50
15
- 65 to + 175
- 65 to + 175
Amps.
Volts
µA
µA
pF
°C/W
°C
°C
Notes :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC
(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.
UPDATE : MAY 27, 1998
RATING AND CHARACTERISTIC CURVES ( 1N5400G - 1N5408G )
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
3.0
2.4
1.8
1.2
0.6
0
0 25 50 75 100 125 150 175
CASE TEMPERATURE, ( °C)
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
100
10
Pulse Width = 300 µs
2% Duty Cycle
1.0
TJ = 25 °C
0.1
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
FORWARD VOLTAGE, VOLTS
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
150
Ta = 25 °C
120
90
60
30
0
12
4 6 10 20 40 60 100
NUMBER OF CYCLES AT 60Hz
FIG 4 . - TYPICAL JUNCTION CAPACITANCE
100
50 TJ = 25 °C
10
5
1
1
2
4 10 20
40 100
REVERSE VOLTAGE, VOLTS
FIG. 5 - TYPICAL REVERSE CHARACTERISTICS
10
Ta = 100 °C
1.0
0.1
Ta = 25 °C
0.01
0
20 40 60 80 100 120 140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
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제조업체: EIC discrete Semiconductors
( eic )
1N5404G rectifier
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[ 1N5404G.PDF ]
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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