2N6402 판매점 - SILICON CONTROLLED RECTIFIERS

2N6402 반도체 회로 부품 판매점

SILICON CONTROLLED RECTIFIERS

Electronix Express

2N6400-2N6405

SILICON CONTROLLED RECTIFIERS

Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).

Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak repetitive off-state voltage (1)

(TJ = -40 to 125°C, sine wave 50 to 60Hz, gate open)

2N6400

2N6401

2N6402

2N6403

2N6404

2N6405

VDRM

VRRM

100

200

400

600

800

Volts

On-state RMS current

(180° conduction angles), TC = 100°C)

IT(RMS) 16 Amps

Average on-state current

(180° conduction angles, TC = 100°C)

IT(AV)

Amps

Peak non-repetitive surge current

(1/2 cycle, sine wave 60Hz, TJ = 90°C)

Circuit fusing (t = 8.3ms)

ITSM

Amps

160

I2t

145

A2s

Forward peak gate power

(pulse width ≤ 1.0µs, TC = 100°C)

Forward average gate power

(t = 8.3ms, TC = 100°C)

PGM

PG(AV)

Watts

0.5

Forward peak gate current

(Pulse width ≤ 1.0µs, TC = 100°C)

IGM

Amps

2.0

Operating junction temperature range

TJ -40 to 125 °C

Storage temperature range

Tstg -40 to 150

°C

1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage, however, positive gate voltage shall not be applied concurrent with

negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

THERMAL CHARACTERISTICS

Characteristic

Thermal resistance, junction to case

Maximum lead temperature for soldering purposes 1/8” from case for 10 seconds

Symbol

RӨJC

Max

1.5

260

Unit

°C/W

°C

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol Min

OFF CHARACTERISTICS

Peak repetitive forward or reverse blocking current

(VAK = rated VDRM or VRRM, gate open)

TJ = 25°C

TJ = 125°C

IDRM,

IRRM

ON CHARACTERISTICS

Peak forward on-state voltage

(ITM = 32A peak, pulse width ≤ 1ms, duty cycle ≤ 2%)

VTM -

Gate trigger current (continuous dc)

(VD = 12Vdc, RL = 100ohms)

TC = 25°C

TC = -40°C

IGT

Gate trigger voltage (continuous dc)

(VD = 12Vdc, RL = 100ohms)

TC = 25°C

TC = -40°C

VGT

Gate non-trigger voltage

(VD = 12Vdc, RL = 100ohms)

TC = 125°C

VGD

0.2

Typ

9.0

0.7

Max

Unit

10 µA

2.0 mA

Volts

1.7

30 mA

1.5 Volts

2.5

Volts

2N6400-2N6405

ON CHARACTERISTICS

Holding current

(VD = 12Vdc, initiating current = 200mA, gate open)

Turn-on time

(ITM = 16A, IGT = 40mAdc, VD = rated VDRM)

Turn-off time

(ITM = 16A, IR = 16A, VD = rated VDRM)

DYNAMIC CHARACTERISTICS

Critical rate of rise of off state voltage

(VD = rated VDRM, exponential waveform)

MECHANICAL CHARACTERISTICS

Case

TO-220AB

Marking

Alpha-numeric

Pin out

See below

SILICON CONTROLLED RECTIFIERS

TC = 25°C

TC = -40°C

TC = 25°C

TJ= 125°C

tgt

TJ = 125°C

dv/dt

18 40 mA

- 60

µs

1.0 -

15 - µs

35 -

V/µs

50 -

TO-220AB

Inches

Millimeters

Min Max Min Max

A 0.575 0.620 14.600 15.750

B 0.380 0.405 9.650 10.290

C 0.160 0.190 4.060 4.820

D 0.025 0.035 0.640 0.890

F 0.142 0.147 3.610 3.730

G 0.095 0.105 2.410 2.670

H 0.110 0.155 2.790 3.930

J 0.014 0.022 0.360 0.560

K 0.500 0.562 12.700 14.270

L 0.045 0.055 1.140 1.390

N 0.190 0.210 4.830 5.330

Q 0.100 0.120 2.540 3.040

R 0.080 0.110 2.040 2.790

S 0.045 0.055 1.140 1.390

T 0.235 0.255 5.970 6.480

U - 0.050 - 1.270

V 0.045 - 1.140

Z - 0.080 - 2.030

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2N6402 rectifier

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국내 전력반도체 판매점

상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

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일반적인 전자부품 판매점

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2N6402 반도체 회로 부품 판매점

SILICON CONTROLLED RECTIFIERS

국내 전력반도체 판매점

일반적인 전자부품 판매점

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