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Fairchild Semiconductor |
1N4001GP - 1N4007GP
Features
• Low forward voltage drop.
• High surge current capability.
• High reliability.
• High current capability.
DO-41
COLOR BAND DENOTES CATHODE
General Purpose Rectifiers (Glass Passivated)
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
VRRM
IF(AV)
IFSM
Tstg
TJ
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current,
.375 " lead length @ TA = 75°C
Non-repetitive Peak Forward Surge
Current
8.3 ms Single Half-Sine-Wave
Storage Temperature Range
Operating Junction Temperature
4001GP 4002GP
50 100
4003G
200
Value
4004GP 4005GP
400 600
1.0
Units
4006GP 4007GP
800 1000 V
A
30
-65 to +175
-65 to +175
A
°C
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
Parameter
PD Power Dissipation
RθJA Thermal Resistance, Junction to Ambient
Value
3.0
50
Units
W
°C/W
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
VF Forward Voltage @ 1.0 A
IR Reverse Current @ rated VR TA = 25°C
TA = 125°C
CT Total Capacitance
VR = 4.0 V, f = 1.0 MHz
4001GP
4002GP
Device
4003G 4004GP 4005GP
1.1
5.0
50
8.0
4006GP
Units
4007GP
V
µA
µA
pF
2001 Fairchild Semiconductor Corporation
1N4001GP-1N4007GP, Rev. C
Typical Characteristics
General Purpose Rectifiers (Glass Passivated)
(continued)
40
30
20
10
0
12
5 10 20
50 100
Number of Cycles at 60Hz
Figure 1. Non-Repetitive Surge Current
1.6
1.4
1.2
1
0.8 SINGLE PHASE
HALF WAVE
0.6 60HZ
RESISTIVE OR
0.4 INDUCTIVE LOAD
.375" 9.0 mm LEAD
0.2 LENGTHS
0
0 25 50 75 100 125 150
Ambient Temperature [ºC]
175
Figure 2. Forward Current Derating Curve
100
50
20
10
5
2
1
0.1
0.5 1
2
5 10
Reverse Voltage, VR [V]
Figure 3. Total Capacitance
10
1
0.1
TJA = 25º C
Pulse Width = 2300µS
21% Duty Cycle
0.01
0.4
0.6 0.8 1 1.2 1.4
Forward Voltage, VF [V]
1.6
Figure 4. Forward Voltage Characteristics
2001 Fairchild Semiconductor Corporation
1N4001GP-1N4007GP, Rev. C
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