SS25F 반도체 회로 부품 판매점
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
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 MDD |
SS22F THRU SS2200F
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Reverse Voltage - 20 to 200 Volts Forward Current - 2.0 Ampere
0.106(2.70)
0.094(2.40)
0.051(1.30)
0.043(1.10)
SMAF
Cathode Band
Top View
0.063(1.60)
0.051(1.30)
0.146(3.7)
0.130(3.3)
0.0091(0.23)
0.0071(0.18)
FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Metal silicon junction,majority carrier conduction
Low power loss,high efficiency
Built-in strain relief,ideal for automated placement
High forward surge current capability
High temperature soldering guaranteed:
260 C/10 seconds at terminals
0.051(1.30)
0.039(1.0)
MECHANICAL DATA
0.193(4.90)
0.173(4.40)
Dimensions in inches and (millimeters)
Case: JEDEC SMAF molded plastic body
Terminals: leads solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight:0.0018 ounce, 0.064 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MDD Catalog Number
SYMBOLS SS22F SS23F SS24F SS25F SS26F SS28F SS210F SS2150F SS2200F
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
VRRM 20 30 40 50 60 80 100 150
VRMS 14 21 28 35 42 56 70 105
VDC 20 30 40 50 60 80 100 150
200
140
200
Maximum average forward rectified current
at TL(see fig.1)
I(AV)
2.0
Peak forward surge current
8.3ms single half sine-wave superimposed on
IFSM
50.0
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 2.0A VF
0.55
0.70 0.85 0.95
Maximum DC reverse current TA=25 C
at rated DC blocking voltage TA=100 C
IR
0.5
10.0
0.2
5.0 2.0
Typical junction capacitance (NOTE 1)
CJ 220
180
Typical thermal resistance (NOTE 2)
Operating junction temperature range
Storage temperature range
RθJA
TJ,
TSTG
-50 to +125
75.0
-50 to +150
-50 to +150
UNITS
VOLTS
VOLTS
VOLTS
Amp
Amps
Volts
mA
pF
C/W
C
C
Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas
RATINGS AND CHARACTERISTIC CURVES SS22F THRU SS2200F
FIG. 1- FORWARD CURRENT DERATING CURVE
2.0
1.6
Single Phase
Half Wave 60Hz
Resistive or
1.2 inductive Load
0.8
0.4 SS22F-SS26F
SS28F-SS2200F
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE, C
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
50
TJ=25 C
10.0
1
0.1
SS22F-SS24F
SS25F-SS26F
SS28F-SS2150F
SS2200F
0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
FIG. 5-TYPICAL JUNCTION CAPACITANCE
2000
1000
TJ=25 C
100
10
0.1
SS22F-SS24F
SS25F-SS2200F
1.0 10
REVERSE VOLTAGE,VOLTS
100
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
50
40
30
20
10 8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0
1 10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
100
10
TJ=100 C
1
TJ=75 C
0.1
0.01
TJ=25 C
0.001 0
20 40
60 80 100
PERCENT OF PEAK REVERSE VOLTAGE,%
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
100
10
1
0.1
0.01
0.1 1
10
t,PULSE DURATION,sec.
100
The cruve graph is for reference only, can't be the basis for judgment(曲线图仅供参考)!
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SS25F rectifier
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상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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