DataSheet.es    


PDF HY64UD16162M Data sheet ( Hoja de datos )

Número de pieza HY64UD16162M
Descripción 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM
Fabricantes Hynix Semiconductor 
Logotipo Hynix Semiconductor Logotipo



Hay una vista previa y un enlace de descarga de HY64UD16162M (archivo pdf) en la parte inferior de esta página.


Total 11 Páginas

No Preview Available ! HY64UD16162M Hoja de datos, Descripción, Manual

www.DataSheet4U.com
HY64UD16162M Series
Document Title
1M x 16 bit Low Low Power 1T/1C Pseudo SRAM
Revision history
Revision No. History
Draft Date Remark
1.0 Initial
Jan. 04. ’ 01 Preliminary
1.1 Revised
Jul. 03. ’ 01 Preliminary
- Change Pin Connection
- Improve tOE from 45ns to 30ns
- Correct State Diagram
1.2 Revised
Jul.18. ’ 01 Preliminary
- Correct Package Dimension
- Change Absolute Maximum Ratings
1.3 Revised
Oct. 07. ‘ 01 Preliminary
- DC Electrical Characteristics ( IDPD,ICC1)
- State Diagram
- Power Up Sequence
- Deep Power Down Sequence
- Read/Write Cycle Note
1.4 Revised
Nov. 14. ’ 01 Preliminary
- DC Electrical Characteristics ( ICC1: 3mA - > 5mA)
1.5 Revised
Dec. 20. ‘ 01 Preliminary
- Improve Standby Current ISB1 from 100uA to 80uA
- Add 70ns Part
- Power Up Sequence
1.6 Revised
Feb. 27. ‘ 02 Preliminary
- Improve ISB1@70ns 100uA to 85uA
- Improve ISB1@85ns 80uA to 75uA
- Improve ICC2@70ns 30mA to 25mA
- Improve ICC2@85ns 30mA to 20mA
- Improve Ambient Temperature C/E to E/I
(0°C~85°C/-25°C~85°C -25°C~85°C/-40°C~85°C)
- Improve Maximum Absolute Ratings
(Vdd : -0.3V to 3.3V -0.3V to 3.6V)
- Improve tOE@85ns 30ns to 20ns
1.7 Revised
Mar. 11. ‘ 02 Final
- Pin Description
- Power Up & Deep Power Down Exit Sequence
This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not
assume any responsibility for use of circuits described. No patent licenses are implied.
Revision 1.7
March. 2002
1

1 page




HY64UD16162M pdf
HY64UD16162M Series
AC CHARACTERISTICS
Vdd=2.7V~3.3V, TA = -25°C to 85°C(E) / -40°C to 85°C(I), unless otherwise specified
# Symbol
Parameter
-70 -85
Min. Max. Min. Max.
Read Cycle
1 tRC Read Cycle Time
70 - 85 -
2 tAA Address Access Time
- 70 - 85
3 tACS Chip Select Access Time
- 70 - 85
4 tOE Output Enable to Output Valid
- 20 - 20
5 tBA /LB, /UB Access Time
- 70 - 85
6 tCLZ Chip Select to Output in Low Z
10 - 10 -
7 tOLZ Output Enable to Output in Low Z
5-5-
8 tBLZ /LB, /UB Enable to Output in Low Z
10 - 10 -
9 tCHZ Chip Disable to Output in High Z
0 20 0 30
10 tOHZ Out Disable to Output in High Z
0 20 0 30
11 tBHZ /LB, /UB Disable to Output in High Z
0 20 0 30
12 tOH Output Hold from Address Change
10 - 10 -
Write Cycle
13 tWC Write Cycle Time
70 - 85 -
14 tCW Chip Selection to End of Write
60 - 70 -
15 tAW Address Valid to End of Write
60 - 70 -
16 tBW /LB, /UB Valid to End of Write
60 - 70 -
17 tAS Address Set-up Time
0-0-
18 tWP Write Pulse Width
50 - 60 -
19 tWR Write Recovery Time
0-0-
20 tWHZ Write to Output in High Z
0 20 0 30
21 tDW Data to Write Time Overlap
30 - 30 -
22 tDH Data Hold from Write Time
0-0-
23 tOW Output Active from End of Write
5-5-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
AC TEST CONDITIONS
TA = -25°C to 85°C(E) / -40°C to 85°C(I), unless otherwise specified
Parameter
Value
Input Pulse Level
0.4V to 2.2V
Input Rising and Fall Time
5ns
Input and Output Timing Reference Level
1.5V
Output Load
See Below
AC TEST LOADS
DOUT
Z0=50 Ohm
RL=50 Ohm
CL1 =30 pF
VL=1.5 V
Note
1. Including jig and scope capacitance.
Revision 1.7
March. 2002
5

5 Page





HY64UD16162M arduino
MARKING INFORMATION
Package
HY64UD16162M Series
Marking Example
FBGA
H Y U D 1 6 1 6 2M
css t
y y wwp
xxxxx
KOR
HYUD16162M
HY
U
D
16
16
2
M
c
ss
t
yy
ww
p
xxxxx
KOR
Note
- Capital Letter
- Small Letter
Index
: Part Name
: HYNIX
: Power Supply
: Tech. + Classification
: Bit Organization
: Density
: Mode
: Version
: 3.0V(2.7V~3.3V)
: 1T+1C
: x16
: 16M
: 1CS with /UB,/LB;tCS
: 1st Generation
: Power Consumption
: Speed
: Temperature
: D – Low Low Power
: 70 – 70ns
85 – 85ns
: E – Extended(-25 ~ 85°C)
I – Industrial(-40 ~ 85°C)
: Year (ex : 01 = year 2001, 02= year 2002)
: Work Week ( ex : 12 = work week 12 )
: Process Code
: Lot No.
: Origin Country
: Fixed Item
: Non-fixed Item
Revision 1.7
March. 2002
11

11 Page







PáginasTotal 11 Páginas
PDF Descargar[ Datasheet HY64UD16162M.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
HY64UD16162B1M x 16 bit Low Low Power 1T/1C Pseudo SRAMHynix Semiconductor
Hynix Semiconductor
HY64UD16162M1M x 16 bit Low Low Power 1T/1C Pseudo SRAMHynix Semiconductor
Hynix Semiconductor

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar