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PDF HY62WT08081E-DTE Data sheet ( Hoja de datos )
| Número de pieza | HY62WT08081E-DTE | |
| Descripción | HY62WT08081E Series 32Kx8bit CMOS SRAM | |
| Fabricantes | Hynix Semiconductor | |
| Logotipo |  |
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HY62WT08081E Series
32Kx8bit CMOS SRAM
Document Title
32K x8 bit 2.7~5.5V Low Power Slow SRAM
Revision History
Revision No History
00 Initial
01 Revised
- Change LL-Part Isb1 Limit @E.T/I.T, 4.5~5.5V
: 15uA => 20uA
02 Revised
- Marking Information Change : SOP Type
- Voh Limit Change : 2.4V => 2.2V @2.7~3.6V
03 Changed Logo
- HYUNDAI -> hynix
- Marking Information Change
04 Revised
- Iccdr Limit Add : 2uA @40°C
Draft Date Remark
Feb.05.2001 Preliminary
Feb.13.2001 Final
Feb.21.2001 Final
Apr.30.2001 Final
May.23.2001 Final
This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility
for use of circuits described. No patent licenses are implied.
Rev 04 / May . 2001
Hynix Semiconductor
1 page  
HY62WT08081E Series
DC CHARACTERISTICS
Vcc = 4.5 ~ 5.5V, TA = 0°C to 70°C (Normal) / -25°C to 85°C (Extended) / -40°C to 85°C (Industrial),
unless otherwise specified.
Symbol
Parameter
Test Condition
Min. Typ. Max.
ILI
Input Leakage Current
Vss < VIN < Vcc
-1 -
1
ILO
Output Leakage Current
Vss < VOUT < Vcc, /CS = VIH or
-1 -
1
/OE = VIH or /WE = VIL
Icc
Operating Power Supply
/CS = VIL,
- - 10
Current
VIN = VIH or VIL, II/O = 0mA
ICC1
Average Operating Current /CS = VIL, VIN = VIH or VIL,
- - 50
Min. Duty Cycle = 100%, II/O = 0mA
ISB TTL Standby Current
/CS= VIH,
--1
(TTL Inputs)
VIN = VIH or VIL
ISB1 CMOS Standby Current /CS > Vcc - 0.2V, 0~ 70°C
- - 10
(CMOS Inputs)
VIN > Vcc - 0.2V or
VIN < Vss + 0.2V -25~ 85°C or -
- 20
-40~ 85°C
VOL Output Low Voltage
IOL = 2.1mA
- - 0.4
VOH Output High Voltage
IOH = -1.0mA
2.4 -
-
Unit
uA
uA
mA
mA
mA
uA
uA
V
V
Note : Typical values are at Vcc =5.0V, TA = 25°C
Vcc = 2.7~3.6V, TA = 0°C to 70°C (Normal) / -25°C to 85°C (Extended) / -40°C to 85°C (Industrial),
unless otherwise specified.
Symbol
Parameter
Test Condition
Min. Typ. Max.
ILI
Input Leakage Current
Vss < VIN < Vcc
-1 -
1
ILO
Output Leakage Current
Vss < VOUT < Vcc, /CS = VIH or
-1 -
1
/OE = VIH or /WE = VIL
Icc
Operating Power Supply
/CS = VIL,
--2
Current
VIN = VIH or VIL, II/O = 0mA
ICC1
Average Operating Current /CS = VIL, VIN = VIH or VIL,
- - 30
Min. Duty Cycle = 100%, II/O = 0mA
ISB TTL Standby Current
/CS= VIH,
- - 0.3
(TTL Inputs)
VIN = VIH or VIL
ISB1 CMOS Standby Current /CS > Vcc - 0.2V, 0~ 70°C
--5
(CMOS Inputs)
VIN > Vcc - 0.2V or
VIN < Vss + 0.2V -25~ 85°C or - - 8
-40~ 85°C
VOL Output Low Voltage
IOL = 2.1mA
- - 0.4
VOH Output High Voltage
IOH = -1.0mA
2.2 -
-
Unit
uA
uA
mA
mA
mA
uA
uA
V
V
Note : Typical values are at Vcc =3.0/3.3V, TA = 25°C
Rev 04 / May. 2001
4
5 Page 
PACKAGE INFORMATION
28pin 600mil Dual In-Line Package(Blank)
•
0.090(2.286)
0.070(1.778)
1.467(37.262)
1.447(36.754)
0.065(1.650)
0.050(1.270)
0.100(2.54)BSC
0.021(0.533)
0.015(0.381)
0.155(3.937)
0.145(3.683)
0.035(0.889)
0.020(0.508)
0.140(3.556)
0.120(3.048)
HY62WT08081E Series
MAX.
UNIT : INCH(mm)
MIN.
0.600(15.240)BSC
0.550(13.970)
0.530(13.462)
3 deg 0.014(0.356)
11 deg
0.008(0.200)
28pin 330mil Small Outline Package(FW)
0.346(8.788)
0.338(8.585)
0.480(12.192)
0.460(11.684)
UNIT : INCH(mm)
MAX
.MIN.
0.728(18.491)
0.720(18.288)
0.110(2.794)
0.094(2.388)
0.014(0.356)
0.002(0.051)
0.050(1.270)BSC
0.020(0.508)
0.014(0.356)
0.050(1.270)
0.030(0.762)
0.012(0.305)
0.008(0.203)
Rev 04 / May. 2001
10
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet HY62WT08081E-DTE.PDF ] | |
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