SMG2306 반도체 회로 부품 판매점
N-Channel MosFET
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 SeCoS |
Elektronische Bauelemente
SMG2306
5.3A, 20V,RDS(ON) 32m
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
The SMG2306 utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The SOT-23 package is universally used for all
commercial-industrial applications
Features
* Capable of 2.5V gate drive
* Lower on-resistance
* Reliable and Rugged
Applications
* Power Management in Notebook Computer
* Protable Equipment
* Battery Powered System
A
L
3
S Top View
21
B
D
G
C
H
Drain
Gate
Source
G
J
K
D
SC-59
Dim Min Max
A 2.70 3.10
B 1.40 1.60
C 1.00 1.30
D 0.35 0.50
G 1.70 2.10
H 0.00 0.10
J 0.10 0.26
K 0.20 0.60
L 0.85 1.15
S 2.40 2.80
All Dimension in mm
Marking : 2306
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
3
Continuous Drain Current, VGS@4.5V
3
Continuous Drain Current, VGS@4.5V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID@TA=25 oC
ID@TA=70 oC
IDM
PD@TA=25 oC
Tj, Tstg
S
Ratings
20
±12
5.3
4.3
10
1.38
0.01
-55~+150
Unit
V
V
A
A
A
W
W / oC
oC
Thermal Data
Parameter
Thermal Resistance Junction-ambient3
Symbol
Rthj-a
Ratings
90
Unit
oC /W
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 4
Elektronische Bauelemente
SMG2306
5.3A, 20V,RDS(ON) 32m
N-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25oC Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Symbol
BVDSS
Min. Typ.
20 _
Max.
_
Unit
V
Test Condition
VGS=0V, ID=250uA
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
BVDS/ Tj
VGS(th)
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
IGSS
IDSS
Static Drain-Source On-Resistance2
RDS(ON)
Total Gate Charge 2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time 2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward Transconductance
Qg
Qgs
Qgd
Td(ON)
Tr
Td(Off)
Tf
Ciss
Coss
Crss
Gfs
_
0.5
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
0.1
_
_
_
_
_
_
_
_
8.7
1.5
3.6
6
14
18.4
2.8
603
144
111
13
_
1.2
±100
1
10
30
35
50
90
_
_
_
_
_
_
_
_
_
_
_
V/ oC Reference to 25oC,ID=1mA
V VDS=VGS, ID=250uA
nA VGS=±12V
uA VDS=20V,VGS=0
uA VDS=16V,VGS=0
VGS=10V, ID=5.5A
VGS=4.5V, ID=5.3A
m
VGS=2.5V, ID=2.6A
VGS=1.8V, ID=1A
ID=5.3A
nC VDS=10V
VGS=4.5V
VDS=15V
ID=1A
nS VGS=10V
RG=2
RD=15
VGS=0V
pF VDS=15V
f=1.0MHz
S VDS=5V, ID=5.3A
Source-Drain Diode
Parameter
Forward On Voltage 2
Reverse Recovery Time
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
_
_
_
Typ.
_
16.8
11
Max.
1.2
_
_
Unit
V
nS
nC
Test Condition
IS=1.2A, VGS=0V.
Is=5A,VGS=0V
dl/dt=100A/uS
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width 300us, dutycycle 2%.
3.Surface mounted on 1 inch2 copper pad of FR4 board; 270°C/W when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 4
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SMG2306 mosfet
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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