SSF7509 반도체 회로 부품 판매점
75V N-Channel MOSFET
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 GOOD-ARK |
Main Product Characteristics
VDSS
75V
RDS(on) 6.5mohm(typ.)
ID 80A
Features and Benefits
TO-220
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175℃ operating temperature
Lead free product
SSF7509
75V N-Channel MOSFET
Marking and Pin
Assignment
Schematic Diagram
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V①
Continuous Drain Current, VGS @ 10V①
Pulsed Drain Current②
Power Dissipation③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=0.3mH
Avalanche Current @ L=0.3mH
Operating Junction and Storage Temperature Range
Max.
80
70
320
200
2.0
75
± 20
375
50
-55 to + 175
Units
A
W
W/°C
V
V
mJ
A
°C
www.goodark.com
Page 1 of 7
Rev.3.5
SSF7509
75V N-Channel MOSFET
Thermal Resistance
Symbol
RθJC
RθJA
Characteristics
Junction-to-case③
Junction-to-ambient (t ≤ 10s) ④
Junction-to-Ambient (PCB mounted, steady-state) ④
Typ.
—
—
—
Max.
0.75
62
40
Units
℃/W
℃/W
℃/W
Electrical Characteristics @TA=25℃ unless otherwise specified
Symbol
V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
Gate threshold voltage
Drain-to-Source leakage current
Gate-to-Source forward leakage
Total gate charge
Gate-to-Source charge
Gate-to-Drain("Miller") charge
Turn-on delay time
Rise time
Turn-Off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
Min.
75
—
—
2
—
—
—
—
-100
—
—
—
—
—
—
—
—
—
—
Typ.
—
6.5
12.5
—
2.35
—
—
—
—
93.6
20.2
33.3
17.3
15.2
52
19
4373
352
306
Max.
—
8
13
4
—
1
50
100
—
—
—
—
—
—
—
—
—
—
—
Units
V
mΩ
V
μA
nA
nC
ns
pF
Conditions
VGS = 0V, ID = 250μA
VGS=10V,ID = 30A
TJ = 125℃
VDS = VGS, ID = 250μA
TJ = 125℃
VDS = 75V,VGS = 0V
TJ = 125℃
VGS =20V
VGS = -20V
ID = 30A,
VDS=30V,
VGS = 10V
VGS=10V, VDS=30V,
RL=15Ω,
RGEN=2.5Ω
VGS = 0V
VDS = 25V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max.
— — 80
— — 320
— 0.85 1.3
— 36 —
— 62 —
Units
A
A
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
IS=30A, VGS=0V
TJ = 25°C, IF =75A, di/dt =
100A/μs
www.goodark.com
Page 2 of 7
Rev.3.5
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SSF7509 mosfet
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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전력반도체 문의 : 010-3582-2743
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