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PDF STU80N4F6 Data sheet ( Hoja de datos )

Número de pieza STU80N4F6
Descripción N-channel Power MOSFET
Fabricantes STMicroelectronics 
Logotipo STMicroelectronics Logotipo



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No Preview Available ! STU80N4F6 Hoja de datos, Descripción, Manual

STU80N4F6
N-channel 40 V, 5.8 mΩ typ., 80 A STripFET™ VI DeepGATE™
Power MOSFET in a IPAK package
Datasheet production data
Features
TAB
IPAK
3
2
1
Figure 1. Internal schematic diagram
' Ć7$%
* 
Order code
STU80N4F6
VDS
40 V
RDS(on) max ID
6.3 mΩ 80 A
Low gate charge
Very low on-resistance
High avalanche ruggedness
Applications
Switching applications
Description
This device is an N-channel Power MOSFET
th
developed using the 6 generation of STripFET™
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFET exhibits
the lowest RDS(on) in all packages.
6 
$0Y
Order code
STU80N4F6
Table 1. Device summary
Marking
Package
80N4F6
IPAK
Packaging
Tube
February 2014
This is information on a product in full production.
DocID023839 Rev 4
1/13
www.st.com
13

1 page




STU80N4F6 pdf
STU80N4F6
Electrical characteristics
Symbol
Table 7. Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD Source-drain current
- 80 A
(1)
ISDM Source-drain current (pulsed)
- 320 A
(2)
VSD Forward on voltage
ISD = 40 A, VGS = 0
-
1.3 V
trr Reverse recovery time
- 41.1
ISD = 80 A, di/dt = 100 A/μs
Qrr Reverse recovery charge VDD = 32 V (see Figure 17) - 43.6
IRRM Reverse recovery current
- 2.1
ns
nC
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
DocID023839 Rev 4
5/13

5 Page





STU80N4F6 arduino
STU80N4F6
DIM
A
A1
b
b2
b4
B5
c
c2
D
E
e
e1
H
L
L1
L2
V1
Package mechanical data
Table 8. IPAK (TO-251) mechanical data
mm.
min.
typ.
2.20
0.90
0.64
5.20
0.30
0.45
0.48
6.00
6.40
2.28
4.40
16.10
9.00
0.80
0.80
10°
max.
2.40
1.10
0.90
0.95
5.40
0.60
0.60
6.20
6.60
4.60
9.40
1.20
1.00
DocID023839 Rev 4
11/13

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