AM2306 반도체 회로 부품 판매점
-30V N-CHANNEL ENHANCEMENT MODE MOSFET
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 AiT Semiconductor |
AiT Semiconductor Inc.
www.ait-ic.com
AM2306
-30V N-CHANNEL ENHANCEMENT MODE
MOSFET
DESCRIPTION
The AM2306 is the N-Channel logic enhancement
mode power field effect transistor is produced using
high cell density. Advanced trench technology to
provide excellent RDS(ON).
This high density process is especially tailored to
minimize on-state resistance. These devices are
particularly suited for low voltage application, and low
in-line power loss are needed in a very small outline
surface mount package.
AM2306 is available in a SOT-23 package.
ORDERING INFORMATION
Package Type
Part Number
SOT-23
AM2306E3R
E3
AM2306E3VR
Note
R: Tape & Reel
V: Green Package
AiT provides all Pb free products
Suffix “ V “ means Green Package
FEATURES
-30V/3.6A, RDS(ON)= 45mΩ(typ.)@VGS= 10V
30V/2.8A, RDS(ON)= 55mΩ(typ.)@VGS= 4.5V
Super high density cell design for extremely
low RDS(ON)
Exceptional on-resistance and Maximum DC
current capability
Available in a SOT-23 package.
APPLICATION
Power Management in Note book
Portable Equipment
DSC
LCD Display inverter
Battery Powered System
DC/DC Converter
P CHANNEL MOSFET
REV1.0
- MAR 2011 RELEASED –
N-Channel
-1-
AiT Semiconductor Inc.
www.ait-ic.com
PIN DESCRIPTION
AM2306
-30V N-CHANNEL ENHANCEMENT MODE
MOSFET
Pin #
1
2
3
Symbol
G
S
D
Top View
Function
Gate
Source
Drain
REV1.0
- MAR 2011 RELEASED –
-2-
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PDF 파일 내의 페이지 : 총 8 페이지
제조업체: AiT Semiconductor
( ait )
AM2306 mosfet
데이터시트 다운로드 :
[ AM2306.PDF ]
[ AM2306 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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