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PDF STB30NM60ND Data sheet ( Hoja de datos )
| Número de pieza | STB30NM60ND | |
| Descripción | N-channel MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STx30NM60ND
N-channel 600 V, 0.11 Ω, 25 A FDmesh™ II Power MOSFET
(with fast diode) TO-220, TO-220FP, D2PAK, I2PAK, TO-247
Features
Type
VDSS @TJ
max
RDS(on)
max
ID
STB30NM60ND
)STI30NM60ND
t(sSTF30NM60ND
cSTP30NM60ND
uSTW30NM60ND
650 V
0.13 Ω
25 A
25 A
25 A(1)
25 A
25 A
rod1. Limited only by maximum temperature allowed
P■ The world’s best RDS(on) in TO-220 amongst
tethe fast recovery diode devices
le■ 100% avalanche tested
o■ Low input capacitance and gate charge
bs■ Low gate input resistance
O■ Extremely high dv/dt and avalanche
-capabilities
ct(s)Application
du■ Switching applications
ProDescription
teThe FDmesh™ II series belongs to the second
legeneration of MDmesh™ technology. This
orevolutionary Power MOSFET associates a new
svertical structure to the company's strip layout
band associates all advantages of reduced on-
Oresistance and fast switching with an intrinsic fast-
I2PAK
123
TO-247
3
2
1
3
D2PAK 1
TO-220
3
2
1
3
2
TO-220FP 1
Figure 1. Internal schematic diagram
$
'
3
!-V
It is therefore strongly recommended for bridge
recovery body diode.
topologies, in particular ZVS phase-shift
converters.
Table 1. Device summary
Order codes
Marking
Package
Packaging
STB30NM60ND
STI30NM60ND
STF30NM60ND
STP30NM60ND
STW30NM60ND
30NM60ND
30NM60ND
30NM60ND
30NM60ND
30NM60ND
D²PAK
I²PAK
TO-220FP
TO-220
TO-247
Tape and reel
Tube
Tube
Tube
Tube
November 2008
Rev 2
1/18
www.st.com
18
1 page  
STx30NM60ND
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 25 A, VGS = 0
25 A
100 A
1.6 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 25 A, VDD = 60 V
di/dt=100 A/µs
(see Figure 20)
170
1.2
15
ns
µC
A
trr Reverse recovery time
ISD = 25 A,VDD = 60 V
di/dt=100 A/µs,
250
ns
Qrr
t(s)IRRM
Reverse recovery charge
Reverse recovery current
TJ = 150 °C
(see Figure 20)
2.5 µC
20 A
c1. Pulse width limited by safe operating area
Obsolete Product(s) - Obsolete Produ2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
5/18
5 Page 
STx30NM60ND
Package mechanical data
TO-220 mechanical data
mm inch
Dim
Min Typ Max Min Typ Max
A 4.40
4.60 0.173
0.181
b 0.61
0.88 0.024
0.034
b1 1.14
1.70 0.044
0.066
c 0.48
0.70 0.019
0.027
D 15.25
15.75
0.6
0.62
D1 1.27
0.050
)E 10
10.40
0.393
0.409
t(se 2.40
2.70 0.094
0.106
e1 4.95
5.15 0.194
0.202
cF 1.23
1.32 0.048
0.051
duH1 6.20
6.60 0.244
0.256
roJ1 2.40
2.72 0.094
0.107
L 13
14 0.511
0.551
PL1 3.50
3.93 0.137
0.154
teL20 16.40
0.645
leL30 28.90
1.137
∅P 3.75
3.85 0.147
0.151
Obsolete Product(s) - ObsoQ 2.65
2.95 0.104
0.116
11/18
11 Page | ||
| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet STB30NM60ND.PDF ] | |
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