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PDF AOI2610 Data sheet ( Hoja de datos )
| Número de pieza | AOI2610 | |
| Descripción | 60V N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AOD2610/AOI2610
60V N-Channel MOSFET
General Description
• Trench Power MV MOSFET technology
• Low RDS(ON)
• Low Gate Charge
• Optimized for fast-switching applications
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
60V
46A
< 10.7mΩ
< 13.5mΩ
Applications
• Synchronous Rectification in DC/DC and AC/DC Converters
• Industrial and Motor Drive applications
100% UIS Tested
100% Rg Tested
Top View
TO-252
DPAK
Bottom View
D
D
Top View
D
TO-251A
IPAK
Bottom View
D
D
S
G
Orderable Part Number
AOD2610
AOI2610
G
S
S
D
G
Package Type
TO-252
TO-251A
G
D
S
Form
Tape & Reel
Tube
G
S
Minimum Order Quantity
2500
4000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
Continuous Drain
Current
Avalanche Current C
TA=25°C
TA=70°C
Avalanche energy L=0.1mH
C
VGS
ID
IDM
IDSM
IAS
EAS
VDS Spike
Power Dissipation B
10µs
TC=25°C
TC=100°C
VSPIKE
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
60
±20
46
36
140
10
8
36
65
72
71.5
35.5
2.5
1.6
-55 to 175
Units
V
V
A
A
A
mJ
V
W
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
15
41
1.7
Max
20
50
2.1
Units
°C/W
°C/W
°C/W
Rev.1.0: December 2014
www.aosmd.com
Page 1 of 6
1 page  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
120
TA=25°C
100
TA=150°C
TA=100°C
100
80
60
10
TA=125°C
40
20
1
1 10 100 1000
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 13: Power De-rating (Note F)
60
50
40
30
20
10
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 14: Current De-rating (Note F)
175
10000
1000
TA=25°C
100
10
1
1E-05
0.001
0.1
10 1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=50°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
0.0001
Single Pulse
PD
Ton
T
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
Rev.1.0: December 2014
www.aosmd.com
Page 5 of 6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AOI2610.PDF ] | |
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