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PDF Si2312CDS Data sheet ( Hoja de datos )
| Número de pieza | Si2312CDS | |
| Descripción | N-Channel 20 V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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New Product
N-Channel 20 V (D-S) MOSFET
Si2312CDS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0318 at VGS = 4.5 V
20 0.0356 at VGS = 2.5 V
0.0414 at VGS = 1.8 V
ID (A)e
6a
6a
5.6
Qg (Typ.)
8.8 nC
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• DC/DC Converters
• Load Switch for Portable Applications
SOT-23
D
G1
S2
3D
Top View
Marking Code
P5 XXX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si2312CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IDM
IS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)
Limit
20
±8
6a
5.1
5b, c
4b, c
20
1.75
1.04b, c
2.1
1.3
1.25b, c
0.8b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
t≤5s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Package limited
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 125 °C/W.
e. Based on TC = 25 °C.
Symbol
RthJA
RthJF
Document Number: 65900
S10-0641-Rev. A, 22-Mar-10
Typical
80
40
Maximum
100
60
Unit
°C/W
www.vishay.com
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
7.5
Si2312CDS
Vishay Siliconix
6.0
Package Limited
4.5
3.0
1.5
0.0
0
25 50 75 100 125
TC - Case Temperature (°C)
Current Derating*
150
2.5 1.2
2.0
0.9
1.5
0.6
1.0
0.3
0.5
0.0
0
25 50 75 100 125
TC - Case Temperature (°C)
Power Derating, Junction-to-Foot
150
0.0
0
25 50 75 100 125 150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65900
S10-0641-Rev. A, 22-Mar-10
www.vishay.com
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