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PDF Si4730EY Data sheet ( Hoja de datos )
| Número de pieza | Si4730EY | |
| Descripción | Current Sensing MOSFET | |
| Fabricantes | Si4820Vishay | |
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New Product
Si4730EY
Vishay Siliconix
Current Sensing MOSFET, N-Channel 30-V (D-S)
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.015 @ VGS = 10 V
0.020 @ VGS = 4.5 V
ID (A)
11.7
10.1
SENSE
KELVIN
S
G
1
2
3
4
SO-8
Top View
8D
7D
6D
5D
D
G
SENSE
KELVIN
N-Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
30
"20
11.7
9.8
40
3.3
3.6
2.5
–55 to 175
8.0
6.7
1.6
1.7
1.2
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71177
S-00823—Rev. A, 01-May-00
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
35
77
18
Maximum
42
90
22
Unit
_C/W
www.vishay.com S FaxBack 408-970-5600
1
1 page  
New Product
Si4730EY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
SENSE DIE
On-Resistance vs. Sense Current
10
On-Resistance vs. Gate-Source Voltage
10
8
6 VGS = 4.5 V
4
VGS = 10 V
8
6 ID = 10 mA
4
22
0
0
1000
800
600
400
0.02
0.04
0.06
0.08
0.10
ISENSE (A)
Current Ratio (I(MAIN)/IS)
vs. Gate-Source Voltage (Figure 1)
RS = 6.6 W
RS = 4.7 W
RS = 2.2 W
RS = 1.1 W
200
0
0 2 4 6 8 10
VGS – Gate-to-Source Voltage (V)
G
SENSE
VG
RS
S KELVIN
0
0 2 4 6 8 10 12 14 16
VGS – Gate-to-Source Voltage (V)
Figure 1
Document Number: 71177
S-00823—Rev. A, 01-May-00
www.vishay.com S FaxBack 408-970-5600
5
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