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PDF AP4501SM Data sheet ( Hoja de datos )
| Número de pieza | AP4501SM | |
| Descripción | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AP4501SM (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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Advanced Power
Electronics Corp.
AP4501SM
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Schottky Diode Included
Description
D2
D2
D1 D1
SO-8
G2
S2
G1
S1
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The SO-8 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
N-CH
P-CH
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
30V
33mΩ
6A
-30V
50mΩ
-5.3A
D1
G1 G2
S1
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
RthJA
Parameter
Thermal Resistance Junction-Ambient3
Rating
N-channel P-channel
30 -30
±20 ±20
6 -5.3
4.8 -4.7
20 -20
2
0.016
-55 to 150
-55 to 150
Max.
Value
62.5
Units
V
V
A
A
A
W
W/℃
℃
℃
Unit
℃/W
Data and specifications subject to change without notice
200410031
1 page  
N-Channel
12
I D= 6 .0A
V DS= 1 6 V
9 V DS =20V
V DS =24V
6
3
10000
1000
100
AP4501SM
f=1.0MHz
Ciss
Coss
Crss
0
0 4 8 12 16
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
10
1 7 13 19 25 31
V DS (V)
Fig 8. Typical Capacitance Characteristics
100
10
1ms
1 10ms
100ms
0.1
0.01
0.1
T A =25 o C
Single Pulse
1 10
V DS (V)
1s
10s
DC
100
Fig 9. Maximum Safe Operating Area
1
Duty Factor = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
PDM
t
T
Duty Factor = t/T
Peak TJ = PDM x RthJA + TA
RthJA =135oC/W
0.001
0.0001
0.001
0.01 0.1
1
t , Pulse Width (s)
10
100 1000
Fig 10. Effective Transient Thermal Impedance
RD
D
VDS
TO THE
OSCILLOSCOPE
RG G
0.5 x RATED VDS
+
10V
-
S
VGS
VDS
D
G
TO THE
OSCILLOSCOPE
0.8 x RATED VDS
S VGS
+
1~ 3 mA
-
II
GD
Fig 11. Switching Time Circuit
Fig 12. Gate Charge Circuit
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet AP4501SM.PDF ] | |
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