|
|
PDF TPCC8104 Data sheet ( Hoja de datos )
| Número de pieza | TPCC8104 | |
| Descripción | MOSFETs | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de TPCC8104 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
|
No Preview Available !
MOSFETs Silicon P-Channel MOS (U-MOS)
TPCC8104
1. Applications
• Lithium-Ion Secondary Batteries
• Power Management Switches
2. Features
(1) Small footprint due to a small and thin package
(2) Low drain-source on-resistance: RDS(ON) = 6.8 mΩ (typ.) (VGS = -10 V)
(3) Low leakage current: IDSS = -10 µA (max) (VDS = -30 V)
(4) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.5 mA)
3. Packaging and Internal Circuit
TPCC8104
1, 2, 3: Source
4: Gate
5, 6, 7, 8: Drain
TSON Advance
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation
Power dissipation
Power dissipation
Single-pulse avalanche energy
Avalanche current
Channel temperature
Storage temperature
(Tc = 25)
(t = 10 s)
(t = 10 s)
(Note 1)
(Note 1)
(Note 2)
(Note 3)
(Note 4)
VDSS
VGSS
ID
IDP
PD
PD
PD
EAS
IAR
Tch
Tstg
-30
-25/+20
-20
-60
27
1.9
0.7
104
-20
150
-55 to 150
V
A
W
W
W
mJ
A
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
2009-10
1 2014-02-17
Rev.3.0
1 page  
8. Characteristics Curves (Note)
TPCC8104
Fig. 8.1 ID - VDS
Fig. 8.2 ID - VDS
Fig. 8.3 ID - VGS
Fig. 8.4 VDS - VGS
Fig. 8.5 RDS(ON) - ID
Fig. 8.6 RDS(ON) - Ta
5 2014-02-17
Rev.3.0
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet TPCC8104.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| TPCC8102 | Field Effect Transistor Silicon P-Channel MOS Type | Toshiba Semiconductor |
| TPCC8103 | Noteboook PC Applications Portable Eqipment Applications | Toshiba Semiconductor |
| TPCC8104 | MOSFETs | Toshiba Semiconductor |
| TPCC8105 | Field Effect Transistor | Toshiba Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |