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PDF APM4500K Data sheet ( Hoja de datos )
| Número de pieza | APM4500K | |
| Descripción | Dual Enhancement Mode MOSFET | |
| Fabricantes | Anpec Electronics | |
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APM4500K
Dual Enhancement Mode MOSFET (N-and P-Channel)
Features
• N-Channel
20V/8A,
RDS(ON) =22mΩ(typ.) @ VGS = 4.5V
RDS(ON) =30mΩ(typ.) @ VGS = 2.5V
• P-Channel
-20V/-4.3A,
RDS(ON) =80mΩ(typ.) @ VGS =-4.5V
RDS(ON) =105mΩ(typ.) @ VGS =-2.5V
• Super High Dense Cell Design
• Reliable and Rugged
• Lead Free Available (RoHS Compliant)
Applications
Pin Description
D1
D1
D2
D2
S1
G1
S2
G2
Top View of SOP − 8
(8) (7)
D1 D1
(3)
S2
(4)
G2
(2)
G1
• Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
S1 D2 D2
(1) (5) (6)
N-Channel MOSFET P-Channel MOSFET
Ordering and Marking Information
APM4500
Lead Free Code
Handling Code
Temp. Range
Package Code
Package Code
K : SOP-8
Operating Junction Tem p. Range
C : -55 to 150°C
Handling Code
TU : Tube TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
APM4500 K :
APM4500
XXXXX
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termina-
tion finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classifica-
tion at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
1
www.anpec.com.tw
1 page  
APM4500K
Typical Characteristics (Cont.)
N-Channel
30
27
24
21
18
15
12
9
6
3
0
0
Output Characteristics
V = 4, 5, 6, 7, 8, 9, 10V
GS
3V
2.5V
2V
1.5V
1234567
8
VDS - Drain-Source Voltage (V)
Drain-Source On Resistance
60
55
50
V =2.5V
45 GS
40
35
30
25
V =4.5V
GS
20
15
10
5
0
0 5 10 15 20 25 30
ID - Drain Current (A)
20
18
16
14
12
10
8
6
4
2
0
0.0
Transfer Characteristics
T =125oC
j
T =25oC
j
T =-55oC
j
0.5 1.0 1.5 2.0 2.5 3.0
VGS - Gate - Source Voltage (V)
Gate Threshold Voltage
1.6
IDS=250µΑ
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Copyright ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
5
www.anpec.com.tw
5 Page 
APM4500K
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition (IR/Convection or VPR Reflow)
TP
TL
Tsm ax
tp
R am p-up
tL
Critical Zone
TL to TP
Tsm in
ts
Preheat
R am p-down
25 t 25 °C to Peak
Classification Reflow Profiles
Tim e
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
Average ramp-up rate
(TL to TP)
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
3°C/second max.
100°C
150°C
60-120 seconds
3°C/second max.
150°C
200°C
60-180 seconds
Time maintained above:
- Temperature (TL)
- Time (tL)
Peak/Classificatioon Temperature (Tp)
183°C
60-150 seconds
See table 1
217°C
60-150 seconds
See table 2
Time within 5°C of actual
Peak Temperature (tp)
10-30 seconds
20-40 seconds
Ramp-down Rate
6°C/second max.
6°C/second max.
Time 25°C to Peak Temperature
6 minutes max.
8 minutes max.
Notes: All temperatures refer to topside of the package .Measured on the body surface.
Copyright ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
11
www.anpec.com.tw
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet APM4500K.PDF ] | |
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