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PDF PSMN022-30PL Data sheet ( Hoja de datos )
| Número de pieza | PSMN022-30PL | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | NXP Semiconductors | |
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PSMN022-30PL
N-channel 30 V 22 mΩ logic level MOSFET
Rev. 02 — 1 November 2010
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for logic level gate drive
sources
1.3 Applications
DC-to-DC converters
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1.
Symbol
VDS
ID
Quick reference data
Parameter
drain-source voltage
drain current
Ptot total power dissipation
Tj junction temperature
Static characteristics
RDSon
drain-source on-state
resistance
Dynamic characteristics
QGD
QG(tot)
gate-drain charge
total gate charge
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source avalanche
energy
Conditions
Tj ≥ 25 °C; Tj ≤ 175 °C
Tmb = 25 °C; VGS = 10 V;
see Figure 1
Tmb = 25 °C; see Figure 2
VGS = 4.5 V; ID = 5 A;
Tj = 25 °C; see Figure 13
VGS = 10 V; ID = 5 A;
Tj = 25 °C; see Figure 13
VGS = 4.5 V; ID = 5 A;
VDS = 15 V; see Figure 14;
see Figure 15
VGS = 10 V; Tj(init) = 25 °C;
ID = 30 A; Vsup ≤ 30 V;
RGS = 50 Ω; unclamped
Min Typ Max Unit
- - 30 V
- - 30 A
--
-55 -
41 W
175 °C
- 27 34 mΩ
- 19 22 mΩ
- 1.4 - nC
- 4.4 - nC
- - 7 mJ
1 page  
NXP Semiconductors
PSMN022-30PL
N-channel 30 V 22 mΩ logic level MOSFET
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
Conditions
see Figure 4
Min Typ Max Unit
- 3.1 3.6 K/W
10
Zth (j-mb)
(K/W)
1
10−1
δ = 0.5
0.2
0.1
0.05
0.02
single shot
003aad356
P δ = tp
T
10−2
10−6
10−5
10−4
10−3
10−2
tp
T
t
10−1
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
values
PSMN022-30PL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 1 November 2010
© NXP B.V. 2010. All rights reserved.
5 of 15
5 Page 
NXP Semiconductors
PSMN022-30PL
N-channel 30 V 22 mΩ logic level MOSFET
7. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
EA
p A1
q mounting
D1 base
D
L1(1)
b1(2)
L (3×)
b2(2)
(2×)
L2(1)
1 23
ee
b(3×)
Q
c
0 5 10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A A1 b b1(2) b2(2) c
D D1 E
e
L
L1(1)
L2(1)
max.
p
q
Q
mm
4.7 1.40 0.9
4.1 1.25 0.6
1.6
1.0
1.3
1.0
0.7
0.4
16.0
15.2
6.6
5.9
10.3
9.7
2.54
15.0
12.8
3.30
2.79
3.0
3.8
3.5
3.0
2.7
2.6
2.2
Notes
1. Lead shoulder designs may vary.
2. Dimension includes excess dambar.
OUTLINE
VERSION
IEC
REFERENCES
JEDEC
JEITA
EUROPEAN
PROJECTION
SOT78
3-lead TO-220AB
SC-46
Fig 18. Package outline SOT78 (TO-220AB)
ISSUE DATE
08-04-23
08-06-13
PSMN022-30PL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 1 November 2010
© NXP B.V. 2010. All rights reserved.
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