(PDF) SPC6605ST6RGB Datasheet - N & P Pair Enhancement Mode MOSFET

Número de pieza	SPC6605ST6RGB
Descripción	N & P Pair Enhancement Mode MOSFET
Fabricantes	SYNC POWER
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No Preview Available ! SPC6605 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC6605 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed. APPLICATIONS z Power Management in Note book z Portable Equipment z Battery Powered System z DC/DC Converter z Load Switch z DSC z LCD Display inverter FEATURES N-Channel 20V/3.6A,RDS(ON)=97mΩ@VGS=4.5V 20V/3.1A,RDS(ON)=113mΩ@VGS=2.5V P-Channel -20V/-2.4A,RDS(ON)= 128mΩ@VGS=-4.5V -20V/-2.0A,RDS(ON)=188mΩ@VGS=-2.5V Super high density cell design for extremely low RDS (ON) TSOP– 6P package design PIN CONFIGURATION( TSOP– 6P ) PART MARKING 2011/8/1 Preliminary Page 1 1 page SPC6605 N & P Pair Enhancement Mode MOSFET 2011/8/1 Preliminary Page 5 5 Page

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PDF SPC6605ST6RGB Data sheet ( Hoja de datos )