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PDF 2N2609 Data sheet ( Hoja de datos )

Número de pieza 2N2609
Descripción POWER MOSFET P CHANNEL
Fabricantes NES　
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Technical Data
2N2609 JAN
POWER MOSFET
P CHANNEL
Processed per MIL-PRF-19500/296
MIL-PRF
QPL
DEVICES
…DESIGNED FOR GENERAL PURPOSE SMALL SIGNAL SWITCHING AND AMPLIFIER APPLICATIONS
ABSOLUTE MAXIMUM RATINGS (TA = 250C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Gate-Source Voltage
Power Dissipation (1)
TA = 250C
Operating Junction & Storage Temperature Range
(1) Derate linearly, 1.71 mW/0C for TA = 250C.
VGSS
PD
Top, Tstg
30
300
-65 to +200
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
PARAMETERS / TEST CONDITIONS
SYMBOL
Gate-Source Breakdown Voltage
VDS = 0, IG = 1.0 µAdc
Gate Reverse Current
V(BR)GSS
VDS = 0, VGS = 30 Vdc
VDS = 0, VGS = 15 Vdc
Drain Current
IGSS
VGS = 0, VDS = 5.0 Vdc
IDDSS
Gate-Source Cutoff Voltage
VDS = 5.0 V, ID = 1.0 µAdc
Magnitude of Small-Signal, Common-Source Short-Circuit
VGS(off)
Forward Transfer Admittance
VGS = 0, VDS = 5.0 Vdc, f = 1.0 kHz
Yfs2
Small-Signal, Common-Source Short-Circuit Input Capacitance
VGS = 0, VDS = 5.0 Vdc, f = 1.0 MHz
Common-Source Spot Noise Figure
Ciss
VGS = 0, VDS = 5.0 Vdc, f = 1.0 kHz
BW = 16%, RG = 1.0 megohms, egen = 1.82 mVdc,
NF
Units
V
mW
0C
MIN.
30
-2.0
0.75
2,000
TO-18 (TO-206AA)
MAX. UNITS
Vdc
30 ηA
22.5
-10.0 ηA
6.0 Vdc
6,250 µmho
10 pF
3.0 dB
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
REV: B
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