DataSheet.es    


PDF HY1506U Data sheet ( Hoja de datos )

Número de pieza HY1506U
Descripción (HY1506U / HY1506I) N-Channel Enhancement Mode MOSFET
Fabricantes HOOYI 
Logotipo HOOYI Logotipo



Hay una vista previa y un enlace de descarga de HY1506U (archivo pdf) en la parte inferior de esta página.


Total 12 Páginas

No Preview Available ! HY1506U Hoja de datos, Descripción, Manual

HY1506P/U/I
N-Channel Enhancement Mode MOSFET
Features
Pin Description
60V/55A,
RDS(ON)=10.5 m(typ.) @ VGS=10V
Avalanche Rated
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
G
D
S
TO-220
Applications
S
D
G
I-PAK(TO-251)
D
TO-262
S
D
G
Power Management for Inverter Systems.
G
Ordering and Marking Information
S
N-Channel MOSFET
P
HY1506
Yÿ YWWJ G
UI
HY1506 HY1506
Yÿ YWWJ G Yÿ YWWJ G
Package Code
P : TO220-3L D : I-PAK
Date Code
YYWW
Assembly Material
G : Lead Free Device
I : TO262-3L
Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. HOOYI
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
1 www.hooyi-semi.com
Free Datasheet http://www.datasheet4u.net/

1 page




HY1506U pdf
HY1506P/U/I
Typical Operating Characteristics (Cont.)
Output Characteristics
160
V = 7,8,9,10V
GS
140
120 6V
100
80
5.5V
60
40 5V
20 4.5V
4V
0
012345
VDS - Drain-Source Voltage (V)
Drain-Source On Resistance
17
16
15
V =4.5V
GS
14
13
V =10V
GS
12
11
10
9
0 20 40 60 80 100
ID - Drain Current (A)
Drain-Source On Resistance
20
I =28A
DS
18
16
14
12
10
8
6
4 5 6 7 8 9 10
VGS - Gate - Source Voltage (V)
Gate Threshold Voltage
1.8
I
DS
=250µA
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25 0 25 50 75 100 125 150 175
Tj - Junction Temperature (°C)
5 www.hooyi-semi.com
Free Datasheet http://www.datasheet4u.net/

5 Page





HY1506U arduino
HY1506P/U/I
Devices Per Unit
Package Type
TO-220
TO-251
TO-262
Unit
Tube
Tube
Tube
Classification Profile
Quantity
50
72
50
11
www.hooyi-semi.com
Free Datasheet http://www.datasheet4u.net/

11 Page







PáginasTotal 12 Páginas
PDF Descargar[ Datasheet HY1506U.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
HY1506I(HY1506U / HY1506I) N-Channel Enhancement Mode MOSFETHOOYI
HOOYI
HY1506PN-Channel Enhancement Mode MOSFETHOOYI
HOOYI
HY1506U(HY1506U / HY1506I) N-Channel Enhancement Mode MOSFETHOOYI
HOOYI

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar