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PDF DTU15P03 Data sheet ( Hoja de datos )

Número de pieza DTU15P03
Descripción P-Channel MOSFET
Fabricantes Din-Tek 
Logotipo Din-Tek Logotipo



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No Preview Available ! DTU15P03 Hoja de datos, Descripción, Manual

P-Channel 30-V (D-S) MOSFET
D561
www.daysemi.jp
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 30 0.0125 at VGS = - 10 V
0.0205 at VGS = - 4.5 V
ID (A)d
- 14.9
- 11.6
Qg (Typ.)
29.5 nC
TO-252
S
G
FEATURES
Halogen-free
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
APPLICATIONS
• Load Switch
• Notebook Adaptor Switch
RoHS
COMPLIANT
GDS
Top View
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
IS
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
TA = 70 °C
TJ, Tstg
Limit
- 30
± 25
- 14.9
- 11.9
- 10.9a, b
- 8.6a, b
- 60
- 4.1
- 2.2a, b
- 20
20
5.0
3.2
2.7a, b
1.7a, b
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, c
Maximum Junction-to-Foot
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 85 °C/W.
d. Based on TC = 25 °C.
t 10 s
Steady State
Symbol
RthJA
RthJF
Typical
38
20
Maximum
46
25
Unit
V
A
mJ
W
°C
Unit
°C/W
1
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DTU15P03 pdf
D561
www.daysemi.jp
MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
17.0
13.6
10.2
6.8
3.4
0.0
0
25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
6.0 2.0
4.8 1.6
3.6 1.2
2.4 0.8
1.2 0.4
0.0
0
25 50 75 100 125
TC - Case Temperature (°C)
Power, Junction-to-Foot
150
0.0
0
25 50 75 100 125 150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
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