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PDF AOI478 Data sheet ( Hoja de datos )
| Número de pieza | AOI478 | |
| Descripción | 100V N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AOD478/AOI478
100V N-Channel MOSFET
General Description
The AOD478/AOI478 combines advanced trench
MOSFET technology with a low resistance package to
provide extremely low RDS(ON). This device is ideal for
boost converters and synchronous rectifiers for
consumer, telecom, industrial power supplies and LED
backlighting.
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
100% UIS Tested
100% Rg Tested
100V
11A
< 140mΩ
< 152mΩ
Top View
TO252
DPAK
Bottom View
D
D
Top View
TO251A
IPAK
Bottom View
D
S
G
G
S
S
D
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
ID
IDM
11
8
24
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
2.5
2
10
5
TC=25°C
Power Dissipation B TC=100°C
PD
45
23
TA=25°C
Power Dissipation A TA=70°C
PDSM
2.1
1.3
Junction and Storage Temperature Range
TJ, TSTG
-55 to 175
G
D
S
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
17
55
2.7
Max
25
60
3.3
G
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 1: Nov. 2011
www.aosmd.com
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/
1 page  
AOD478/AOI478
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100 60
TA=25°C
10 TA=150°C
TA=100°C
TA=125°C
50
40
30
20
10
1
1 10 100
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability (Note
C)
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 13: Power De-rating (Note F)
175
15
12
9
6
3
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 14: Current De-rating (Note F)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=60°C/W
10000
1000
100
10
TA=25°C
17
5
2
10
1
0.00001 0.001
0.1
10 0 1000
Pulse Width (s) 18
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
Rev 1: Nov. 2011
www.aosmd.com
Page 5 of 6
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AOI478.PDF ] | |
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