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Número de pieza | AOD2916 | |
Descripción | N-Channel MOSFET | |
Fabricantes | Alpha & Omega Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AOD2916 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! AOD2916
100V N-Channel MOSFET
General Description
Product Summary
The AOD2916 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an
extremely low combination of RDS(ON), Ciss and Coss.
This device is ideal for boost converters and synchronous
rectifiers for consumer, telecom, industrial power supplies
and LED backlighting.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
100% UIS Tested
100% Rg Tested
100V
25A
< 34mΩ
< 43.5mΩ
Top View
TO252
DPAK
Bottom View
D
D
D
SG
GS
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS
EAS
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
G
Maximum
100
±20
25
18
50
5.5
4.5
8
3
50
25
2.5
1.6
-55 to 175
S
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
15
41
2.5
Max
20
50
3
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 0: Sep. 2012
www.aosmd.com
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/
1 page AOD2916
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60 30
50
40 20
30
20 10
10
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 12: Power De-rating (Note F)
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 13: Current De-rating (Note F)
10000
1000
100
10
TA=25°C
17
5
2
10
1
1E-05
0.001
0.1
10
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
1000
0
18
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=50°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
0.01
0.001
1E-05
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
Rev 0: Sep. 2012
www.aosmd.com
Page 5 of 6
Free Datasheet http://www.datasheet4u.com/
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet AOD2916.PDF ] |
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