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PDF SI4403BDY Data sheet ( Hoja de datos )
| Número de pieza | SI4403BDY | |
| Descripción | P-Channel MOSFET | |
| Fabricantes | Vishay | |
| Logotipo |  |
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P-Channel 1.8-V (G-S) MOSFET
Si4403BDY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.017 @ VGS = - 4.5 V
- 20 0.023 @ VGS = - 2.5 V
0.032 @ VGS = - 1.8 V
ID (A)
- 9.9
- 8.5
- 7.2
FEATURES
D TrenchFETr Power MOSFETS
SO-8
S1
S2
S3
G4
8D
7D
6D
5D
Top View
Ordering Information: Si4403BDY
Si4403BDY-T1 (with Tape and Reel)
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
- 20
"8
- 9.9 - 7.3
- 7.9 - 5.8
- 30
- 2.3 - 1.3
2.5 1.35
1.6 0.87
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72268
S-31412—Rev. A, 07-Jul-03
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
43
71
19
Maximum
50
92
25
Unit
_C/W
www.vishay.com
1
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Si4403BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
0.2
0.1
0.1
0.05
0.02
0.01
10 - 4
Single Pulse
10 - 3
10 - 2
10 - 1
Square Wave Pulse Duration (sec)
1
10
Document Number: 72268
S-31412—Rev. A, 07-Jul-03
www.vishay.com
5
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