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PDF SI4477DY Data sheet ( Hoja de datos )
| Número de pieza | SI4477DY | |
| Descripción | P-Channel MOSFET | |
| Fabricantes | Vishay | |
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P-Channel 20-V (D-S) MOSFET
Si4477DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 20 0.0062 at VGS = - 4.5 V
0.0105 at VGS = - 2.5 V
ID (A)d
- 26.6
- 20.6
Qg (Typ.)
59 nC
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
APPLICATIONS
• Load Switch
• Adapter Switch
- Notebook
- Game Station
S
G
Top View
Ordering Information: Si4477DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
IS
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
TA = 70 °C
TJ, Tstg
D
P-Channel MOSFET
Limit
- 20
± 12
- 26.6
- 21.3
- 18a, b
- 14.5a, b
- 60
- 5.5
- 2.5a, b
30
45
6.6
4.2
3a, b
1.95a, b
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, c
Maximum Junction-to-Foot
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 80 °C/W.
d. Based on TC = 25 °C.
t ≤ 10 s
Steady State
Document Number: 64829
S09-0858-Rev. A, 18-May-09
Symbol
RthJA
RthJF
Typical
34
15
Maximum
41
19
Unit
°C/W
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1
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MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
25
20
15
10
5
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
8 2.0
Si4477DY
Vishay Siliconix
1.6
6
1.2
4
0.8
2
0.4
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Power, Junction-to-Foot
0.0
0
25 50 75 100 125 150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 64829
S09-0858-Rev. A, 18-May-09
www.vishay.com
5
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5 Page | ||
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