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PDF AUIRF2903Z Data sheet ( Hoja de datos )
| Número de pieza | AUIRF2903Z | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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AUTOMOTIVE GRADE
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
G
PD -96379
AUIRF2903Z
HEXFET® Power MOSFET
D V(BR)DSS
30V
RDS(on) typ.
1.9mΩ
max. 2.4mΩ
kID (Silicon Limited) 260A
S
ID (Package Limited) 160A
Description
D
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
S
D
G
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use in
TO-220AB
AUIRF2903Z
Automotive applications and a wide variety of other applications.
GDS
Absolute Maximum Ratings
Gate
Drain
Source
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient
temperature (TA) is 25°C, unless otherwise specified.
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
VGS
EAS
EAS (Tested )
IAR
EAR
TJ
TSTG
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally limited)
hSingle Pulse Avalanche Energy Tested Value
ÃAvalanche Current
gRepetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
iMounting Torque, 6-32 or M3 screw
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
jJunction-to-Case
iCase-to-Sink, Flat, Greased Surface
iJunction-to-Ambient
Max.
260k
180k
160k
1020
290
2.0
± 20
290
820
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y10 lbf in (1.1N m)
Typ.
–––
0.50
–––
Max.
0.51
–––
62
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
Free Datasheet http://www0.6da/t2a2sh/e1e1t4u.com/
1 page  
12000
10000
8000
6000
4000
2000
0
1
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
10
VDS, Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
AUIRF2903Z
20
ID= 75A
16
VDS= 24V
VDS= 15V
12
8
4
0
0 40 80 120 160 200 240
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.0
100.0
TJ = 175°C
10.0
TJ = 25°C
1.0
0.1
0.0
VGS = 0V
0.4 0.8 1.2 1.6 2.0
VSD, Source-to-Drain Voltage (V)
2.4
Fig 7. Typical Source-Drain Diode
Forward Voltage
10000
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1msec
100μsec
10 LIMITED BY PACKAGE
10msec
1 Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0.1 1.0
DC
10.0
VDS , Drain-toSource Voltage (V)
100.0
Fig 8. Maximum Safe Operating Area
www.irf.com
5
Free Datasheet http://www.datasheet4u.com/
5 Page 
AUIRF2903Z
Ordering Information
Base part Package Type
AUIRF2903Z
TO-220
Standard Pack
Form
Tube
Complete Part Number
Quantity
50
AUIRF2903Z
www.irf.com
11
Free Datasheet http://www.datasheet4u.com/
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet AUIRF2903Z.PDF ] | |
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