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PDF AUIRF2805 Data sheet ( Hoja de datos )
| Número de pieza | AUIRF2805 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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AUTOMOTIVE GRADE
PD - 97690A
AUIRF2805
Features
l Advanced Planar Technology
l Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Repetitive Avalanche Allowed
up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified*
G
HEXFET® Power MOSFET
D V(BR)DSS
RDS(on) typ.
max
ID (Silicon Limited)
S ID (Package Limited)
55V
3.9m
4.7m
175A
75A
Description
Specifically designed for Automotive applications,
this Stripe Planar design of HEXFET® Power
MOSFETs utilizes the latest processing techniques
to achieve low on-resistance per silicon area. This
benefit combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in Automotive and a wide variety of other applications.
D
G
Gate
DS
G
TO-220AB
AUIRF2805
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
cIDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS
EAS
EAS (tested)
IAR
EAR
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
iSingle Pulse Avalanche Energy Tested Value
cAvalanche Current
hRepetitive Avalanche Energy
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
RJC
RCS
RJA
jJunction-to-Case
Parameter
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Max.
175
120
75
700
330
2.2
± 20
450
1220
See Fig. 12a, 12b, 15, 16
-55 to + 175
y y300
10 lbf in (1.1N m)
Typ.
–––
0.50
–––
Max.
0.45
–––
62
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
Free Datashee1t2h/t1tp4://1/1www.datasheet4u.com/
1 page  
AUIRF2805
10000
8000
6000
4000
VGS = 0V, f = 1 MHZ
C iss = C gs + C gd , C ds
SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
2000
0
1
Coss
Crss
10
VDS, Drain-to-Source Voltage (V)
100
20
ID= 104A
16
VDS= 44V
VDS= 28V
12
8
4
0
0 40 80 120 160 200 240
QG Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
ance
1000.0
100.0
TJ = 175°C
10000
1000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
10.0
1.0 TJ = 25°C
0.1
0.2
VGS = 0V
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VSD, Source-toDrain Voltage (V)
100 100μsec
1msec
10
Tc = 25°C
Tj = 175°C
1 Single Pulse
1 10
10msec
100
VDS , Drain-toSource Voltage (V)
1000
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
Fig 8. Maximum Safe Operating Area
5
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5 Page 
AUIRF2805
Ordering Information
Base part
number
Package Type
AUIRF2805
TO-220
Standard Pack
Form
Tube
Complete Part Number
Quantity
50
AUIRF2805
www.irf.com
11
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| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet AUIRF2805.PDF ] | |
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