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PDF SIS430DN Data sheet ( Hoja de datos )
| Número de pieza | SIS430DN | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Vishay | |
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N-Channel 25-V (D-S) MOSFET
SiS430DN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0051 at VGS = 10 V
25
0.0069 at VGS = 4.5 V
ID (A)a
35
35
Qg (Typ.)
13 nC
PowerPAK® 1212-8
3.30 mm
D
8D
7
D
6
D
5
S
1S
3.30 mm
2
S
3
G
4
Bottom View
Ordering Information: SiS430DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
APPLICATIONS
• DC/DC Converter
- POL
- Server
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Avalanche Current
Avalanche Energy
L = 0.1 mH
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
VDS
VGS
ID
IDM
IAS
EAS
IS
PD
TJ, Tstg
Limit
25
± 20
35a
35a
21.5b, c
17b, c
60
30
45
35a
3.2b, c
52
33
3.8b, c
2b, c
- 55 to 150
260
Unit
V
A
mJ
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
Symbol
RthJA
RthJC
Typical
24
1.9
Maximum
33
2.4
Unit
°C/W
Notes:
a. Package Limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK 1212 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 81 °C/W.
Document Number: 69025
S-82655-Rev. A, 03-Nov-08
www.vishay.com
1
Free Datasheet http://www.datasheet4u.com/
1 page  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100 60
80
60
40 Package Limited
20
50
40
30
20
10
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
0
25
SiS430DN
Vishay Siliconix
50 75 100 125
TC - Case Temperature (°C)
Power Derating
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 69025
S-82655-Rev. A, 03-Nov-08
www.vishay.com
5
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| PDF Descargar | [ Datasheet SIS430DN.PDF ] | |
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