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PDF SSD20P03-60 Data sheet ( Hoja de datos )

Número de pieza SSD20P03-60
Descripción P-Ch Enhancement Mode Power MOSFET
Fabricantes SeCoS 
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Elektronische Bauelemente
SSD20P03-60
P-Ch Enhancement Mode Power MOSFET
24A, -30V, RDS(ON) 59mΩ
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density trench
process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.
Typical applications are DC-DC converters and power management in portable
And battery-powered products such as computers, printers, PCMCIA cards,
cellular and cordless telephones.
TO-252(D-Pack)
FEATURES
Low RDS(on) provides higher efficiency and extends battery life.
Low thermal impedance copper leadframe DPAK saves board space.
Fast switching speed.
High performance trench technology.
PRODUCT SUMMARY
VDS(V)
-30
PRODUCT SUMMARY
RDS(on) m(
59@VGS= -10V
95@VGS= -4.5V
ID(A)
24
19

Gate

Drain
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
Source
A
B
GE
K HF
MJ
C
D
N
O
P
Millimeter
Millimeter
REF. Min. Max. REF. Min. Max.
A 6.4
6.8 J
2.30 REF.
B 5.20 5.50 K 0.70 0.90
C 2.20 2.40 M 0.50 1.1
D 0.45 0.58 N 0.9 1.6
E 6.8 7.3 O 0 0.15
F 2.40 3.0 P 0.43 0.58
G 5.40 6.2
H 0.8 1.20
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current a
ID @TA=25
Pulsed Drain Current b
IDM
Continuous Source Current (Diode Conduction) a
IS
Total Power Dissipation a
PD @TA=25
Operating Junction and Storage Temperature Range TJ, TSTG
-30
±20
24
±40
-30
50
-55 ~ 175
THERMAL RESISTANCE RATINGS
Maximum Thermal Resistance Junction-Ambient a
RθJA
50
Maximum Thermal Resistance Junction-Case
RθJC
3.0
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature.
UNIT
V
V
A
A
A
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
18-May-2010 Rev. A
Any changes of specification will not be informed individually.
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